Invention Grant
- Patent Title: Assembly for the manufacture of highly integrated circuits on a semiconductor substrate
- Patent Title (中): 用于在半导体衬底上制造高度集成电路的组件
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Application No.: US470309Application Date: 1999-12-22
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Publication No.: US06152073APublication Date: 2000-11-28
- Inventor: Josef Mathuni
- Applicant: Josef Mathuni
- Applicant Address: DEX Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DEX Munich
- Priority: DEX4405667 19940222; DEX19502777 19950125
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/033 ; H01L21/311 ; C23C16/00
Abstract:
A method for the manufacture of highly-integrated circuits on a semiconductor substrate includes applying coatings to front and back sides of a wafer of semiconductor material in at least one deposition process, and subsequently removing the coating on the back of the wafer by etching being carried out with the front of the wafer being free of lacquer. The etching is performed in a process chamber in which reactive particles produced in a plasma only reach the back of the wafer, while advances of the reactive particles toward the front of the wafer are prevented by a protective neutral gas.
Public/Granted literature
- US5081133A 2-Anilinocyanopyridines having fungicidal properties Public/Granted day:1992-01-14
Information query
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