Invention Grant
US6156149A In situ deposition of a dielectric oxide layer and anti-reflective
coating
失效
电介质氧化物层和抗反射涂层的原位沉积
- Patent Title: In situ deposition of a dielectric oxide layer and anti-reflective coating
- Patent Title (中): 电介质氧化物层和抗反射涂层的原位沉积
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Application No.: US852788Application Date: 1997-05-07
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Publication No.: US6156149APublication Date: 2000-12-05
- Inventor: David Cheung , Judy H. Huang , Wai-Fan Yau
- Applicant: David Cheung , Judy H. Huang , Wai-Fan Yau
- Applicant Address: CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: CA Santa Clara
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C16/52 ; H01L21/027 ; H01L21/768 ; B32B31/00
Abstract:
This invention provides a method and apparatus for depositing a two-layer structure, including an antireflective coating and a dielectric layer, without any intervening process steps, such as a cleaning step. The invention is capable of providing more accurate and easier fabrication of structures by reducing inaccuracies caused by the reflection and refraction of incident radiant energy within a photoresist layer used in the patterning of the dielectric layer. Additionally, the antireflective coating of the present invention may also serve as an etch stop layer during the patterning of a layer formed over the antireflective coating.
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