发明授权
US6156676A Laser marking of semiconductor wafer substrate while inhibiting
adherence to substrate surface of particles generated during laser
marking
失效
半导体晶片基板的激光标记，同时抑制在激光标记期间产生的颗粒的衬底表面的粘附
- 专利标题： Laser marking of semiconductor wafer substrate while inhibiting adherence to substrate surface of particles generated during laser marking
- 专利标题（中）： 半导体晶片基板的激光标记，同时抑制在激光标记期间产生的颗粒的衬底表面的粘附
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申请号： US122335申请日： 1998-07-24
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公开(公告)号： US6156676A公开(公告)日： 2000-12-05
- 发明人: Nobuyoshi Sato , Hiroshi Ohsawa , Hitoshi Hasegawa
- 申请人： Nobuyoshi Sato , Hiroshi Ohsawa , Hitoshi Hasegawa
- 申请人地址： CA Milpitas
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 当前专利权人地址： CA Milpitas
- 优先权： JPX9-206614 19970731
- 主分类号： B23K26/00
- IPC分类号： B23K26/00 ; B23K26/14 ; H01L21/00 ; H01L21/02 ; H01L21/324
摘要：
The present invention provides apparatus and a process for efficiently removing particles generated during a laser marking of the semiconductor wafer substrate, thereby improving the yield. The process of the invention for marking a semiconductor wafer substrate by a beam of laser radiation comprises the steps of flowing a gas over a marking region at a predetermined flow rate and removing the gas from the marking region at the same predetermined flow rate, thereby generating a gas flow having a predetermined flow rate over and adjacent the marking region so that particles produced from the semiconductor wafer substrate while it is being marked will be removed. In a preferred embodiment, the semiconductor wafer substrate may be mounted with its upper surface to be marked directed downwardly while the laser marking beam is directed upwardly to the substrate.
公开/授权文献
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