发明授权
US6159849A Methods of forming nitride dielectric layers having reduced exposure to
oxygen
失效
形成具有减少的暴露于氧气的氮化物电介质层的方法
- 专利标题： Methods of forming nitride dielectric layers having reduced exposure to oxygen
- 专利标题（中）： 形成具有减少的暴露于氧气的氮化物电介质层的方法
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申请号： US21005申请日： 1998-02-09
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公开(公告)号： US6159849A公开(公告)日： 2000-12-12
- 发明人: Seong-hun Kang , Young-lark Koh , Jung-kyu Lee
- 申请人： Seong-hun Kang , Young-lark Koh , Jung-kyu Lee
- 申请人地址： KRX
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX
- 优先权： KRX97-11900 19970331
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/318 ; H01L21/822 ; H01L21/8242 ; H01L27/108 ; H01L21/44
摘要：
of A method of forming a dielectric layer includes the steps of forming an electrode on a microelectronic substrate, and forming depressions and protrusions on exposed portions of the electrode thereby increasing a surface area thereof. An exposed portion of the electrode including the depressions and protrusions is nitrified, and the electrode is not exposed to oxygen during and between the steps of forming the depressions and protrusions and nitrifying the exposed portion of the electrode. A nitride layer is then formed on a nitrified electrode. Related structures are also discussed.
公开/授权文献
- US5346775A Article comprising solder with improved mechanical properties 公开/授权日：1994-09-13
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