公开(公告)号：US6159849A

公开(公告)日：2000-12-12

申请号：US21005

申请日：1998-02-09

申请人： Seong-hun Kang ,  Young-lark Koh ,  Jung-kyu Lee

发明人： Seong-hun Kang ,  Young-lark Koh ,  Jung-kyu Lee

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/44

CPC分类号： H01L28/40 ,  H01L21/3185 ,  H01L27/10852 ,  H01L28/84

摘要： of A method of forming a dielectric layer includes the steps of forming an electrode on a microelectronic substrate, and forming depressions and protrusions on exposed portions of the electrode thereby increasing a surface area thereof. An exposed portion of the electrode including the depressions and protrusions is nitrified, and the electrode is not exposed to oxygen during and between the steps of forming the depressions and protrusions and nitrifying the exposed portion of the electrode. A nitride layer is then formed on a nitrified electrode. Related structures are also discussed.

摘要翻译： 形成电介质层的方法包括以下步骤：在微电子衬底上形成电极，并且在电极的暴露部分上形成凹陷和突起，从而增加其表面积。 包括凹陷和突起的电极的暴露部分被硝化，并且在形成凹陷和突起的步骤期间和在形成凹陷和突起的步骤之间并且在电极的暴露部分硝化之后电极不暴露于氧气。 然后在硝化电极上形成氮化物层。 还讨论了相关结构。

公开(公告)号：US06194281B1

公开(公告)日：2001-02-27

申请号：US08961448

申请日：1997-10-30

申请人： Seong-hun Kang ,  Young-lark Koh ,  Jung-kyu Lee

发明人： Seong-hun Kang ,  Young-lark Koh ,  Jung-kyu Lee

IPC分类号： H01L218242

CPC分类号： H01L28/84 ,  H01L27/10852

摘要： A method of forming an integrated circuit capacitor includes the steps of forming an insulating layer on an integrated circuit substrate, and forming a conductive layer on the insulating layer opposite the integrated circuit substrate. A patterned ozone tetraethylorthosilicate undoped silicate layer is formed on the conductive layer, and conductive spacers are formed along sidewalls of the ozone tetraethylorthosilicate undoped silicate layer. A dielectric layer is formed on the conductive spacers and on the first conductive layer, and a second conductive layer is formed on the dielectric layer opposite the first conductive layer in the conductive spacers.

摘要翻译： 形成集成电路电容器的方法包括以下步骤：在集成电路基板上形成绝缘层，并在与集成电路基板相对的绝缘层上形成导电层。 在导电层上形成图案化的四氧化四乙基原硅酸盐未掺杂的硅酸盐层，并且在臭氧四乙基原硅酸盐未掺杂的硅酸盐层的侧壁上形成导电间隔物。 在导电间隔物和第一导电层上形成电介质层，并且在与导电间隔物中的第一导电层相对的电介质层上形成第二导电层。