Invention Grant
- Patent Title: Low dielectric constant film and method thereof
- Patent Title (中): 低介电常数薄膜及其制备方法
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Application No.: US21716Application Date: 1998-02-10
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Publication No.: US6162743APublication Date: 2000-12-19
- Inventor: Cheng-Jye Chu , Qin Jang , Wei Qiang , Yuhua Du
- Applicant: Cheng-Jye Chu , Qin Jang , Wei Qiang , Yuhua Du
- Main IPC: H01L21/312
- IPC: H01L21/312 ; H01L21/31
Abstract:
A dielectric film comprising silicon, oxygen and carbon having a low dielectric constant, superior thermal stability and adhesion to commonly employed semiconductor materials is described. The film is formed from a polyorganosilane polymer applied to a substrate and subsequently cured in a two-step or three-step cure process. The film is advantageously suited for, among other things, damascene, double damascene and interlayer dielectric applications.
Public/Granted literature
- US5344852A Unsaturated polyester-polyurethane hybrid resin foam compositions Public/Granted day:1994-09-06
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