公开(公告)号：US6162743A

公开(公告)日：2000-12-19

申请号：US21716

申请日：1998-02-10

Applicant: Cheng-Jye Chu ,  Qin Jang ,  Wei Qiang ,  Yuhua Du

Inventor： Cheng-Jye Chu ,  Qin Jang ,  Wei Qiang ,  Yuhua Du

IPC: H01L21/312 ,  H01L21/31

CPC classification number: H01L21/02126 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/3122

Abstract: A dielectric film comprising silicon, oxygen and carbon having a low dielectric constant, superior thermal stability and adhesion to commonly employed semiconductor materials is described. The film is formed from a polyorganosilane polymer applied to a substrate and subsequently cured in a two-step or three-step cure process. The film is advantageously suited for, among other things, damascene, double damascene and interlayer dielectric applications.

Abstract translation: 描述了具有低介电常数，优异的热稳定性和对常用半导体材料的粘附性的硅，氧和碳的电介质膜。 该膜由施加到基底上的聚有机硅烷聚合物形成，随后在两步或三步固化过程中固化。 该膜有利地适用于大马士革，双镶嵌和层间绝缘应用。

公开(公告)号：US20120046480A1

公开(公告)日：2012-02-23

申请号：US12860035

申请日：2010-08-20

Applicant: Cheng-Jye Chu ,  Chih-Hung Chen

Inventor： Cheng-Jye Chu ,  Chih-Hung Chen

IPC: C07F1/08 ,  B05D3/02

CPC classification number: C23C16/408 ,  C23C16/56

Abstract: The disclosure provides a dense Cu thin film, a dense CuO thin film and the manufacturing process applied in metallization process of ultra-large scale integration (ULSI), which uses a two-step growth consisting of pre-deposition and annealing to form a dense Cu thin film or a dense CuO thin film. In the process, a copper-containing metal-organic complex is used as precursor and a reducing gas is used as carrier gas. The precursor is carried to a reactive system with a substrate by a carrier gas and pre-deposit a CuO thin film on the substrate under lower temperature. Next, stop supplying the precursor and raise the temperature or offer other energy to anneal the thin film with hydrogen gas or reducing gas, which reduces the CuO thin film to a smooth and dense Cu thin film. Then, choosing oxide containing gas as the react gas obtains the CuO thin film.

Abstract translation: 本发明提供致密的Cu薄膜，致密的CuO薄膜以及应用于超大规模集成（ULSI）的金属化工艺中的制造工艺，其使用由预沉积和退火组成的两步​​生长以形成致密的 Cu薄膜或致密的CuO薄膜。 在该方法中，使用含铜的金属 - 有机络合物作为前体，还原气体用作载气。 将前体通过载气携带到具有衬底的反应体系中，并在较低温度下在衬底上预沉积CuO薄膜。 接下来，停止供应前体并提高温度或提供其他能量以用氢气或还原气体对薄膜进行退火，这将CuO薄膜还原成光滑且致密的Cu薄膜。 然后，选择含氧气体作为反应气体得到CuO薄膜。

公开(公告)号：US06391465B1

公开(公告)日：2002-05-21

申请号：US09087227

申请日：1998-05-29

Applicant: Haixing Zheng ,  Su-Jen Ting ,  Cheng-Jye Chu

Inventor： Haixing Zheng ,  Su-Jen Ting ,  Cheng-Jye Chu

IPC: B32B1508

CPC classification number: C09D183/14

Abstract: A composition suitable for treating metal surfaces prior to bonding of the surfaces to materials including metals, rubber, glass, polymers, sealants, coatings, and in particular polymeric adhesives, to enhance the strength of the bond and to prolong useful life in corrosive environments, is described. The composition comprises: (a) water; (b) metal alkoxide comprising M(OR)x, where M is a metal and R is an alkyl group; and (c) organoalkoxysilane comprising silane coupling functional groups capable of bonding with the material to be bonded to the metal surface; and (d) acid to promote hydrolysis and cross-linking of the metal alkoxide and organoalkoxysilane, wherein the molar ratio of metal alkoxide:organoalkoxysilane:acid is selected such that the composition is characterized by: (i) an extended shelf life, and (ii) is capable of cross-linking when applied to the metal surface to form an adherent coating having a substantially uniform distribution of metal, silicon, and oxygen species through the thickness of the coating, (iii) is capable of bonding with the material to be bonded to the metal surface to form a strong adherent bond between the metal surface and the material to be bonded to the metal surface. Also described is a method of using the composition to bond metal surfaces to one another.

Abstract translation: 在将表面粘合到包括金属，橡胶，玻璃，聚合物，密封剂，涂层，特别是聚合物粘合剂的材料之前，适于处理金属表面的组合物，以增强粘结强度并延长腐蚀环境的使用寿命， 被描述。 组合物包括：（a）水; （b）包含M（OR）x的金属醇盐，其中M是金属，R是烷基; 和（c）有机烷氧基硅烷，其包含能够与待结合的材料与金属表面结合的硅烷偶联官能团; 和（d）酸以促进金属醇盐和有机烷氧基硅烷的水解和交联，其中选择金属醇盐：有机烷氧基硅烷：酸的摩尔比，使得组合物的特征在于：（i）延长的保质期和（ ii）当应用于金属表面时能够交联以形成通过涂层厚度具有金属，硅和氧物质的基本均匀分布的粘附涂层，（iii）能够与材料粘合 结合到金属表面以在金属表面和待结合到金属表面的材料之间形成牢固的粘结。 还描述了使用组合物将金属表面彼此粘合的方法。

公开(公告)号：US08926745B2

公开(公告)日：2015-01-06

申请号：US13242315

申请日：2011-09-23

Applicant: Cheng-Jye Chu ,  Chih-Hung Chen

Inventor： Cheng-Jye Chu ,  Chih-Hung Chen

IPC: C04B28/26 ,  C09J11/06 ,  H05H1/24 ,  H01L21/00 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56

Abstract: A method for preparing a low dielectric constant (low k) material and a film thereof is provided. The method includes the following steps. A substrate is first put into a plasma generating reaction system, and a carrier gas carrying a carbon and fluorine containing silicon dioxide precursor is then introduced into the plasma generating reaction system, so that the carbon and fluorine containing silicon dioxide precursor is formed on the substrate. After that, the carbon and fluorine containing silicon dioxide precursor is converted to a low k material film through heating; meanwhile, a stress of the low k material film is eliminated such that the film has a more compact structure. By means of these steps the carbon and fluorine containing silicon dioxide precursor is still capable of forming a low k material film of silicon dioxide containing a large amount of fluorocarbon, even under various different atmospheres.

Abstract translation: 提供了制备低介电常数（低k）材料及其膜的方法。 该方法包括以下步骤。 首先将基板放入等离子体产生反应体系中，然后将载有含碳和氟的二氧化硅前体的载气引入等离子体产生反应体系中，使得含碳和氟的二氧化硅前体形成在基板上 。 之后，通过加热将含碳和氟的二氧化硅前体转化为低k材料膜; 同时，消除了低k材料膜的应力，使得膜具有更紧凑的结构。 通过这些步骤，即使在各种不同的气氛下，含氟和氟的二氧化硅前体仍然能够形成含有大量碳氟化合物的二氧化硅的低k材料膜。

公开(公告)号：US20120024369A1

公开(公告)日：2012-02-02

申请号：US13187775

申请日：2011-07-21

Applicant: Cheng-Jye CHU ,  Ruei-Ming Huang ,  Hui-Ju Chuang

Inventor： Cheng-Jye CHU ,  Ruei-Ming Huang ,  Hui-Ju Chuang

IPC: H01L31/0224 ,  H01L31/18 ,  B82Y99/00

CPC classification number: H01G9/2031 ,  H01G9/2059 ,  Y02E10/542 ,  Y02P70/521

Abstract: A photo-chemical solar cell with nanoneedle electrode and a method manufacturing the same includes at least a working electrode, a counter electrode, an electrolyte layer and a photosensitized dye layer. The working electrode is an nanoneedle electrode formed from an nanoneedle semiconductor layer, wherein the nanoneedle semiconductor layer is prepared by sol-gel method at a low temperature to increase the specific surface area, adsorb more dye, increase the conductive ratio of the electrode, and thus improve the photo-current and the conversion efficiency.

Abstract translation: 具有纳米针电极的光电化学太阳能电池及其制造方法至少包括工作电极，对电极，电解质层和光敏染料层。 工作电极是由纳米针半导体层形成的纳米针电极，其中通过溶胶 - 凝胶法在低温下制备纳米针半导体层以增加比表面积，吸附更多的染料，增加电极的导电率，以及 从而提高光电流和转换效率。

公开(公告)号：US06734686B2

公开(公告)日：2004-05-11

申请号：US10118778

申请日：2002-04-08

Applicant: Chi-Hui Lin ,  Cheng-Jye Chu ,  Pai-Mou Lee ,  Goang-Cheng Chang

Inventor： Chi-Hui Lin ,  Cheng-Jye Chu ,  Pai-Mou Lee ,  Goang-Cheng Chang

IPC: G01R2726

CPC classification number: G01F23/268 ,  G01F23/263 ,  G01F23/266 ,  G01N27/226

Abstract: This invention relates to a method for detecting quantity variation of high purity liquid chemicals by way of detecting capacitance variation to determine the liquid level of liquid chemicals. Meanwhile, the ratio of the area of the smallest electrode of the capacitor to the distance between the electrodes is adjusted to magnify the capacitance so that a very small variation can be observed clearly. This invention also discloses a device to carry out this method.

Abstract translation: 本发明涉及一种用于通过检测电容变化来检测高纯度液体化学品的量变化以确定液体化学品的液位的方法。 同时，电容器的最小电极的面积与电极之间的距离的比率被调节以放大电容，使得可以清楚地观察到非常小的变化。 本发明还公开了一种执行该方法的装置。

公开(公告)号：US20120118204A1

公开(公告)日：2012-05-17

申请号：US13242315

申请日：2011-09-23

Applicant: Cheng-Jye CHU ,  Chih-Hung CHEN

Inventor： Cheng-Jye CHU ,  Chih-Hung CHEN

IPC: C09D5/00 ,  C23C16/50 ,  C23C16/56 ,  C23C16/40

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56

Abstract: A method for preparing a low dielectric constant (low k) material and a film thereof is provided. The method includes the following steps. A substrate is first put into a plasma generating reaction system, and a carrier gas carrying a carbon and fluorine containing silicon dioxide precursor is then introduced into the plasma generating reaction system, so that the carbon and fluorine containing silicon dioxide precursor is formed on the substrate. After that, the carbon and fluorine containing silicon dioxide precursor is converted to a low k material film through heating; meanwhile, a stress of the low k material film is eliminated such that the film has a more compact structure. By means of these steps the carbon and fluorine containing silicon dioxide precursor is still capable of forming a low k material film of silicon dioxide containing a large amount of fluorocarbon, even under various different atmospheres.

Abstract translation: 提供了制备低介电常数（低k）材料及其膜的方法。 该方法包括以下步骤。 首先将基板放入等离子体产生反应体系中，然后将载有含碳和氟的二氧化硅前体的载气引入等离子体产生反应体系中，使得含碳和氟的二氧化硅前体形成在基板上 。 之后，通过加热将含碳和氟的二氧化硅前体转化为低k材料膜; 同时，消除了低k材料膜的应力，使得膜具有更紧凑的结构。 通过这些步骤，即使在各种不同的气氛下，含氟和氟的二氧化硅前体仍然能够形成含有大量碳氟化合物的二氧化硅的低k材料膜。

公开(公告)号：US5807430A

公开(公告)日：1998-09-15

申请号：US521915

申请日：1995-11-06

Applicant: Haixing Zheng ,  Su-Jen Ting ,  Cheng-Jye Chu

Inventor： Haixing Zheng ,  Su-Jen Ting ,  Cheng-Jye Chu

IPC: C09D183/14 ,  C09D183/06 ,  C09D183/07 ,  C09D183/08

CPC classification number: C09D183/14

Abstract: A composition suitable for treating metal surfaces prior to bonding of the surfaces to materials including metals, rubber, glass, polymers, sealants, coatings, and in particular polymeric adhesives, to enhance the strength of the bond and to prolong useful life in corrosive environments, is described. The composition comprises: (a) water; (b) metal alkoxide comprising M(OR).sub.x, where M is a metal and R is an alkyl group; and (c) organoalkoxysilane comprising silane coupling functional groups capable of bonding with the material to be bonded to the metal surface; and (d) acid to promote hydrolysis and crosslinking of the metal alkoxide and organoalkoxysilane, wherein the molar ratio of metal alkoxide:organoalkoxysilane:acid is selected such that the composition is characterized by: (i) an extended shelf life, and (ii) is capable of crosslinking when applied to the metal surface to form a adherent coating having a substantially uniform distribution of metal, silicon, and oxygen species through the thickness of the coating, (iii) is capable of bonding with the material to be bonded to the metal surface to form a strong adherent bond between the metal surface and the material to be bonded to the metal surface. Also described is a method of using the composition to bond metal surfaces to one another.

Abstract translation: 在将表面粘合到包括金属，橡胶，玻璃，聚合物，密封剂，涂层，特别是聚合物粘合剂的材料之前，适于处理金属表面的组合物，以增强粘结强度并延长腐蚀环境的使用寿命， 被描述。 组合物包括：（a）水; （b）包含M（OR）x的金属醇盐，其中M是金属，R是烷基; 和（c）有机烷氧基硅烷，其包含能够与待结合的材料与金属表面结合的硅烷偶联官能团; 和（d）酸以促进金属醇盐和有机烷氧基硅烷的水解和交联，其中选择金属醇盐：有机烷氧基硅烷：酸的摩尔比，使得组合物的特征在于：（i）延长的保质期，和（ii） 当施加到金属表面上时能够交联以形成通过涂层的厚度具有金属，硅和氧物质的基本上均匀分布的粘附涂层，（iii）能够与待粘合的材料结合 金属表面以在金属表面和待结合到金属表面的材料之间形成牢固的粘结。 还描述了使用组合物将金属表面彼此粘合的方法。

公开(公告)号：US20110180788A1

公开(公告)日：2011-07-28

申请号：US13013626

申请日：2011-01-25

Applicant: Chuang-I CHEN ,  Cheng-Jye Chu ,  Ruei-Ming Huang

Inventor： Chuang-I CHEN ,  Cheng-Jye Chu ,  Ruei-Ming Huang

IPC: H01L51/30

CPC classification number: G02B1/18 ,  B32B17/00 ,  B82Y30/00 ,  C03C17/3417 ,  C03C2217/75 ,  C03C2217/76 ,  C03C2218/113 ,  G02B27/0006

Abstract: The disclosure is a compound semiconductor thin film with anti-fog function and the manufacturing method thereof. The thin film at least includes a dense semiconductor thin film combined with a porous-needle semiconductor thin film. The disclosed compound semiconductor thin film decreases the contact angle of water and achieves hydrophilic and anti-fog properties for a long lifetime.

Abstract translation: 本发明是具有防雾功能的化合物半导体薄膜及其制造方法。 薄膜至少包括与多孔针状半导体薄膜组合的致密半导体薄膜。 所公开的化合物半导体薄膜降低了水的接触角，并且长时间地实现亲水和防雾性能。