公开(公告)号：US6162743A

公开(公告)日：2000-12-19

申请号：US21716

申请日：1998-02-10

Applicant: Cheng-Jye Chu ,  Qin Jang ,  Wei Qiang ,  Yuhua Du

Inventor： Cheng-Jye Chu ,  Qin Jang ,  Wei Qiang ,  Yuhua Du

IPC: H01L21/312 ,  H01L21/31

CPC classification number: H01L21/02126 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/3122

Abstract: A dielectric film comprising silicon, oxygen and carbon having a low dielectric constant, superior thermal stability and adhesion to commonly employed semiconductor materials is described. The film is formed from a polyorganosilane polymer applied to a substrate and subsequently cured in a two-step or three-step cure process. The film is advantageously suited for, among other things, damascene, double damascene and interlayer dielectric applications.

Abstract translation: 描述了具有低介电常数，优异的热稳定性和对常用半导体材料的粘附性的硅，氧和碳的电介质膜。 该膜由施加到基底上的聚有机硅烷聚合物形成，随后在两步或三步固化过程中固化。 该膜有利地适用于大马士革，双镶嵌和层间绝缘应用。