发明授权
US6166951A Multi state sensing of NAND memory cells by applying reverse-bias voltage
有权
通过施加反向偏置电压对NAND存储单元进行多状态感测
- 专利标题： Multi state sensing of NAND memory cells by applying reverse-bias voltage
- 专利标题（中）： 通过施加反向偏置电压对NAND存储单元进行多状态感测
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申请号： US370010申请日： 1999-08-06
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公开(公告)号： US6166951A公开(公告)日： 2000-12-26
- 发明人: Narbeh Derhacobian , Hao Fang , Michael Han
- 申请人： Narbeh Derhacobian , Hao Fang , Michael Han
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： G11C11/56
- IPC分类号： G11C11/56 ; G11C16/04 ; G11C16/26
摘要：
A method and circuit for sensing multi states of a NAND memory cell by applying reverse bias voltage at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the applied reverse P well bias, and sensing the memory cell state.
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