发明授权
- 专利标题： Plasma film forming method and plasma film forming apparatus
- 专利标题（中）： 等离子体成膜法和等离子体成膜装置
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申请号： US09101516申请日： 1998-07-10
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公开(公告)号： US06215087B1公开(公告)日： 2001-04-10
- 发明人: Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
- 申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
- 优先权： JP8-320911 19961114
- 主分类号： B23K1000
- IPC分类号： B23K1000
摘要：
Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.
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