公开(公告)号：US06355902B2

公开(公告)日：2002-03-12

申请号：US09750683

申请日：2001-01-02

申请人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

发明人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC分类号： B23K1000

CPC分类号： H01L21/0212 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76837

摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

摘要翻译： 将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。 该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。 此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

公开(公告)号：US06215087B1

公开(公告)日：2001-04-10

申请号：US09101516

申请日：1998-07-10

申请人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

发明人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC分类号： B23K1000

CPC分类号： H01L21/0212 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76837

摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

摘要翻译： 将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。 该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。 此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

公开(公告)号：US06443165B1

公开(公告)日：2002-09-03

申请号：US09101554

申请日：1998-09-21

申请人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Shuichi Ishizuka ,  Masahide Saito ,  Tadashi Hirata

发明人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Shuichi Ishizuka ,  Masahide Saito ,  Tadashi Hirata

IPC分类号： B08B600

CPC分类号： C23C16/4405

摘要： A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.

摘要翻译： 一种用于等离子体处理系统的方法，其缩短了在真空容器中固化的含氟碳膜的清洁所需的时间，并且在进行清洁时保护转印台的表面。 在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。 在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。 在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成散射的CO 2。 另一方面，F分散为F2。 因此，去除CF膜。

公开(公告)号：US06727182B2

公开(公告)日：2004-04-27

申请号：US09101308

申请日：1998-10-15

申请人： Takashi Akahori ,  Shuichi Ishizuka ,  Shunichi Endo ,  Takeshi Aoki ,  Tadashi Hirata

发明人： Takashi Akahori ,  Shuichi Ishizuka ,  Shunichi Endo ,  Takeshi Aoki ,  Tadashi Hirata

IPC分类号： H01L21302

CPC分类号： H01L21/31144 ,  H01L21/31138 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl3 gas. Thereafter, when the surface of the wafer is irradiated with O2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO2 or the like may be substituted for the film.

摘要翻译： 本发明的目的是提供一种可以将含氟碳膜的层间绝缘膜实际应用的含氟碳膜（CF膜）的方法。 在CF膜4上形成例如TiN膜41的导电膜。在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体蚀刻TiN膜41。 此后，当用O 2等离子体照射晶片的表面时，对CF膜进行化学蚀刻，并且还蚀刻抗蚀剂膜42。 然而，由于TiN膜41用作掩模，因此可以形成预定的孔。 尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作将互连层粘附到CF膜4并用作互连层的一部分的粘附层。 作为掩模，可以用SiO 2等的绝缘膜代替膜。

公开(公告)号：US06087614A

公开(公告)日：2000-07-11

申请号：US101668

申请日：1998-10-29

申请人： Shuichi Ishizuka ,  Risa Nakase ,  Takeshi Aoki

发明人： Shuichi Ishizuka ,  Risa Nakase ,  Takeshi Aoki

IPC分类号： H01L21/31 ,  H01J37/32 ,  B23K9/00

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32284

摘要： The invention is intended to produce a plasma of uniform density in a wide region and to achieve plasma processing of a surface of a wafer (W) highly uniformly. A transmission window (23) which transmits a microwave is held on an upper wall of a vacuum vessel (2) having a plasma chamber (21) and a film forming chamber (22), and a waveguide (4) for guiding the microwave of 2.45 GHz for propagation into the vacuum vessel (2) in a TM mode is joined to the outer surface of the transmission window (23). The waveguide (4) has a rectangular waveguide section (41) a cylindrical waveguide section (42) serving as a TM converter, and a conical waveguide section (43) having an exit end connected to the outer surface of the transmission window (23). The microwave is propagated in a TM mode into the vacuum vessel (2) and a magnetic field is created in the vacuum vessel (2). A plasma can be formed in uniform density in the plasma chamber (21) if the inside diameter (A) of the exit end of the conical waveguide section is in the range of 130 to 160 mm, so that the highly uniform plasma processing of the surface of a wafer (W) of, for example, 8 in. in diameter can be achieved.

摘要翻译： PCT No.PCT / JP97 / 04225 Sec。 371日期：1998年10月29日第 102（e）日期1998年10月29日PCT 1997年11月20日PCT公布。 公开号WO98 / 22977 日期1998年5月28日本发明旨在产生在宽范围内具有均匀密度的等离子体，并且能够高度均匀地实现晶片表面（W）的等离子体处理。 透射微波的透射窗（23）保持在具有等离子体室（21）和成膜室（22）的真空容器（2）的上壁上，以及用于引导微波的波导 以TM模式传播到真空容器（2）中的2.45GHz接合到透射窗（23）的外表面。 波导管（4）具有矩形波导部分（41），用作TM转换器的圆柱形波导部分（42）和具有连接到透射窗（23）的外表面的出射端的锥形波导部分（43） 。 微波以TM模式传播到真空容器（2）中，并且在真空容器（2）中产生磁场。 如果锥形波导部分的出口端的内径（A）在130至160mm的范围内，则可以在等离子体室（21）中以均匀的密度形成等离子体，使得高度均匀的等离子体处理 可以实现例如8英寸直径的晶片（W）的表面。

公开(公告)号：US06537904B1

公开(公告)日：2003-03-25

申请号：US09658675

申请日：2000-09-08

申请人： Shuichi Ishizuka

发明人： Shuichi Ishizuka

IPC分类号： H01L2144

CPC分类号： H01L21/76802 ,  H01L21/02112 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/318 ,  H01L21/76801 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： When a semiconductor device using fluorine-containing carbon films (CF films) 21, 22, 23 as inter-layer dielectric films is fabricated using boron nitride films (BN films) as hard masks 31, 32, 33, total inter-wiring capacitance of the semiconductor device can be made low. After a first CF film 21 as an inter-layer dielectric film is stacked, a hard mask 31 composed of a BN film is stacked on the CF film 21, and thereafter selectively removed by etching to form a predetermined groove pattern. The CF film 21 is next etched by using the hard mask 31 as a mask to form grooves for forming wiring layers 51. Then, Cu is buried into the grooves to complete the semiconductor device. Since this semiconductor device uses the CF film and the MN film having low relative dielectric constants, the relative dielectric constant of the entire semiconductor device can be made low. As a result, its total inter-wiring capacitance can be made low as well.

摘要翻译： 当使用氮化硼膜（BN膜）作为硬掩模31,32,33来制造使用含氟碳膜（CF膜）21,22,23作为层间电介质膜的半导体器件时，总布线电容 可以使半导体器件变得低。 在作为层间电介质膜的第一CF膜21层叠之后，在CF膜21上层叠由BN膜构成的硬掩模31，然后通过蚀刻选择性地除去以形成规定的槽图案。 接着通过使用硬掩模31作为掩模来蚀刻CF膜21，以形成用于形成布线层51的槽。然后，将Cu埋入槽中以完成半导体器件。 由于该半导体器件使用具有低相对介电常数的CF膜和MN膜，所以可以使整个半导体器件的相对介电常数低。 因此，其总布线电容也可以变低。

公开(公告)号：US06419985B1

公开(公告)日：2002-07-16

申请号：US09578719

申请日：2000-05-26

申请人： Shuichi Ishizuka

发明人： Shuichi Ishizuka

IPC分类号： C23C1626

CPC分类号： H01L21/0212 ,  B05D1/62 ,  B05D3/0254 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3127

摘要： A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure is disclosed. An inert plasma producing gas, such as argon, is introduced into a vacuum vessel along with a thin film deposition gas, such as a compound gas containing fluorine and carbon. Activation of the plasma producing gas activates the thin film producing gas, resulting in a thin fluorine containing carbon insulator film on the semiconductor device. In order to thermally stabilize the insulator layer, the semiconductor device is annealed.

摘要翻译： 公开了一种在具有多层互连结构的半导体器件中制造用作层间绝缘膜的绝缘膜的方法。 将惰性等离子体产生气体如氩气与薄膜沉积气体如含氟和碳的复合气体一起引入真空容器中。 激活等离子体产生气体激活产生薄膜的气体，在半导体器件上产生薄的含氟碳绝缘膜。 为了使绝缘体层热稳定，半导体器件退火。

公开(公告)号：US5531834A

公开(公告)日：1996-07-02

申请号：US273878

申请日：1994-07-12

申请人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata ,  Akira Suzuki

发明人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata ,  Akira Suzuki

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/3105 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/509 ,  H01J37/3266 ,  H01L21/31051

摘要： A plasma film forming apparatus comprises gas supply means for feeding a processing gas into a processing chamber, a first electrode opposed to an object of processing in the processing chamber, a second electrode in the form of a flat coil facing the first electrode across the object of processing, pressure regulating means for keeping the pressure in the processing chamber at 0.1 Torr or below, heating means for heating the object of processing to a predetermined temperature, and application means for applying radio-frequency power between the first and second electrodes, whereby the processing gas is converted into a plasma such that a film is formed on the surface of the object of processing through reaction of ions or active seeds in the plasma. When radio-frequency power is applied between the pair of electrodes, a radio-frequency electric field is formed. Since one of the electrodes is the flat coil, however, a magnetic field is formed. As a result, the processing gas is converted into a plasma by electrical and magnetic energies. Accordingly, the processing gas can be changed into a plasma under low pressure, and a high-density plasma can be generated even under a pressure of 0.1 Torr or below. Thus, the efficiency of ion application to the surface of the object of processing is high, and the effect of impurity extraction is great.

摘要翻译： 等离子体膜形成装置包括用于将处理气体供给到处理室中的气体供给装置，与处理室中的处理对象相对的第一电极，与面对第一电极的平面线圈形式的第二电极 处理用的压力调节机构，将处理室内的压力保持在0.1Torr以下，将加工对象物加热到预定温度的加热装置，以及在第一和第二电极之间施加射频功率的施加装置，由此 处理气体转化为等离子体，使得通过等离子体中的离子或活性种子的反应在加工对象的表面上形成膜。 当在一对电极之间施加射频电力时，形成射频电场。 然而，由于电极中的一个是扁平线圈，所以形成磁场。 结果，处理气体通过电和能量转换成等离子体。 因此，处理气体可以在低压下变为等离子体，即使在0.1Torr以下的压力下也能够产生高密度的等离子体。 因此，离子施加到加工对象表面的效率高，杂质提取的效果大。

公开(公告)号：US5522934A

公开(公告)日：1996-06-04

申请号：US428363

申请日：1995-04-25

申请人： Akira Suzuki ,  Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

发明人： Akira Suzuki ,  Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/509 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma processing apparatus comprises a susceptor for supporting a target object to be processed having a target surface to be processed in a process vessel, a plurality of process gas supply nozzles for supplying a process gas for the target object into the process vessel, and an RF coil for generating an electromagnetic wave in the process vessel to generate a plasma of the process gas. The supplying nozzles have process gas injection holes formed at a plurality of levels in a direction substantially perpendicular to the target surface of the target object in the process vessel, and the gas injection holes located at an upper level are closer to a center of the target surface than gas injection holes located at a lower level.

摘要翻译： 一种等离子体处理装置，包括：用于将处理容器内要被处理的目标表面支撑待加工的目标物体的基座，用于将目标物体的处理气体供给到处理容器中的多个处理气体供给喷嘴， RF线圈，用于在处理容器中产生电磁波，以产生处理气体的等离子体。 供给喷嘴具有在处理容器中与目标物体的目标表面大致垂直的方向上形成有多个等级的处理气体注入孔，位于上层的气体注入孔更靠近目标物的中心 表面比位于较低水平的气体注入孔。

公开(公告)号：US5476182A

公开(公告)日：1995-12-19

申请号：US117683

申请日：1993-09-08

申请人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

发明人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/32082 ,  H05H1/46 ,  H01J2237/3341 ,  H01J2237/3345

摘要： An etching apparatus for etching an insulating film of an object to be processed having the insulating film comprises a first chamber into which an inert gas is introduced, a plasma generating section for converting the inert gas to a plasma in the first chamber, a second chamber, which communicates with the first chamber, for receiving a reactive gas for etching the insulating film and generating radicals of the reactive gas therein, and a support electrode for supporting the object to be processed in the second chamber and attracting ions in the plasma of the inert gas to the object to be processed. The radicals is generated when the reactive gas introduced into the second chamber is excited by the plasma of the inert gas diffused from the first chamber to the second chamber. The insulating film and the radicals react with each other by the assist of the ions of the inert gas, thereby etching the insulating film.

摘要翻译： 用于蚀刻具有绝缘膜的待处理物体的绝缘膜的蚀刻装置包括：引入惰性气体的第一室，用于将惰性气体转换成第一室中的等离子体的等离子体产生部，第二室 ，其与第一室连通，用于接收用于蚀刻绝缘膜并在其中产生反应气体的自由基的反应气体;以及支撑电极，用于在第二室中支撑待处理物体并吸引等离子体中的离子 惰性气体被加工物体。 当引入第二室的反应气体被从第一室扩散到第二室的惰性气体的等离子体激发时，产生自由基。 绝缘膜和自由基通过惰性气体的离子的帮助彼此反应，从而蚀刻绝缘膜。