公开(公告)号：US06218299B1

公开(公告)日：2001-04-17

申请号：US09101244

申请日：1998-07-06

申请人： Takashi Akahori ,  Yoko Naito ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

发明人： Takashi Akahori ,  Yoko Naito ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC分类号： H01L2144

CPC分类号： H01L21/0212 ,  C23C16/029 ,  C23C16/26 ,  C23C16/325 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/7685 ,  H01L21/76856

摘要： For example, in a plasma processing system, C4F8 gas and C2H4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350° C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.

摘要翻译： 例如，在等离子体处理系统中，在压力为0.2Pa，微波功率为2.7kW的条件下，分别以60sccm和30sccm的流量将C4F8气体和C2H4气体作为成膜气体引入， 1.5kW的射频功率和350℃的晶片温度。同时，还以150sccm的流量引入等离子体气体以形成F含量例如为22％的CF膜13， 该硅膜13的相对介电常数为2.4。

公开(公告)号：US06443165B1

公开(公告)日：2002-09-03

申请号：US09101554

申请日：1998-09-21

申请人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Shuichi Ishizuka ,  Masahide Saito ,  Tadashi Hirata

发明人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Shuichi Ishizuka ,  Masahide Saito ,  Tadashi Hirata

IPC分类号： B08B600

CPC分类号： C23C16/4405

摘要： A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.

摘要翻译： 一种用于等离子体处理系统的方法，其缩短了在真空容器中固化的含氟碳膜的清洁所需的时间，并且在进行清洁时保护转印台的表面。 在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。 在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。 在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成散射的CO 2。 另一方面，F分散为F2。 因此，去除CF膜。

公开(公告)号：US06355902B2

公开(公告)日：2002-03-12

申请号：US09750683

申请日：2001-01-02

申请人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

发明人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC分类号： B23K1000

CPC分类号： H01L21/0212 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76837

摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

摘要翻译： 将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。 该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。 此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

公开(公告)号：US06333269B2

公开(公告)日：2001-12-25

申请号：US09153141

申请日：1998-09-14

申请人： Yoko Naito ,  Hideaki Amano

发明人： Yoko Naito ,  Hideaki Amano

IPC分类号： H01L213065

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32678 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31629

摘要： It is an object to enhance the degree of freedom for the shape of an obtained magnetic field to enhance the inplane uniformity of thickness of first and second films when the first and second films are continuously formed on a substrate to be treated. A main electromagnetic coil 5 is provided outside of a plasma chamber 21 so as to be movable vertically by a lifting shaft 52. When plasma is produced in a vacuum vessel 2 by the electron cyclotron resonance between a microwave and a magnetic field to continuously deposit a film of a two-layer structure, which comprises an SiOF film and an SiO2 film, on a wafer W with the produced plasma, a process for forming the SiOF film is carried out while the main electromagnetic coil 5 is arranged so that the lower surface of the coil 5 is positioned at a lower position than the lower surface of a transmission window 23 by 139 mm, and a process for forming the SiO2 film is carried out while the main electromagnetic coil 5 is arranged so that the lower surface of the coil 5 is positioned at a lower position than the lower surface of the transmission 23 by 157 mm.

摘要翻译： 本发明的目的是提高所获得的磁场的形状的自由度，以在第一和第二膜连续地形成在待处理的基板上时增强第一和第二膜的厚度的面内均匀性。 主电磁线圈5设置在等离子体室21的外部，以便通过提升轴52可垂直移动。当通过微波和磁场之间的电子回旋共振在真空容器2中产生等离子体以连续沉积 在具有所产生的等离子体的晶片W上包括SiOF膜和SiO 2膜的两层结构的膜，进行形成SiOF膜的工艺，同时主电磁线圈5被布置成使得下电极 线圈5位于比透射窗23的下表面低139mm的位置，并且在主电磁线圈5被布置成使得线圈的下表面被布置的同时执行用于形成SiO 2膜的工艺 5位于比变速器23的下表面低157mm的位置。

公开(公告)号：US06215087B1

公开(公告)日：2001-04-10

申请号：US09101516

申请日：1998-07-10

申请人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

发明人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC分类号： B23K1000

CPC分类号： H01L21/0212 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76837

摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

摘要翻译： 将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。 该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。 此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。