发明授权
US06271144B1 Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics
失效
用于蚀刻多晶Si（1-x）Ge（x）层或多晶Si（1-x）Ge（x）层和多晶Si层的堆叠的方法及其在微电子学中的应用
- 专利标题： Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics
- 专利标题（中）： 用于蚀刻多晶Si（1-x）Ge（x）层或多晶Si（1-x）Ge（x）层和多晶Si层的堆叠的方法及其在微电子学中的应用
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申请号： US09103121申请日： 1998-06-23
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公开(公告)号： US06271144B1公开(公告)日： 2001-08-07
- 发明人: Cédric Monget , Sophie Vallon , Olivier Joubert
- 申请人： Cédric Monget , Sophie Vallon , Olivier Joubert
- 优先权： FR9707940 19970625
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
The process for etching a polycrystalline Si1−xGex layer or a stack includes a polycrystalline Si1−xGex layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl2) and of either nitrogen (N2) or ammonia (NH3) or of a nitrogen/ammonia mixture.
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