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    Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics
    1.
    发明授权
    Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics 失效
    用于蚀刻多晶Si（1-x）Ge（x）层或多晶Si（1-x）Ge（x）层和多晶Si层的堆叠的方法及其在微电子学中的应用

    公开(公告)号：US06271144B1

    公开(公告)日：2001-08-07

    申请号：US09103121

    申请日：1998-06-23

    申请人： Cédric Monget ,  Sophie Vallon ,  Olivier Joubert

    发明人： Cédric Monget ,  Sophie Vallon ,  Olivier Joubert

    IPC分类号： H01L21302

    CPC分类号： H01L21/28282 ,  H01L21/32137

    摘要： The process for etching a polycrystalline Si1−xGex layer or a stack includes a polycrystalline Si1−xGex layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl2) and of either nitrogen (N2) or ammonia (NH3) or of a nitrogen/ammonia mixture.

    摘要翻译： 用于蚀刻多晶Si1-xGex层或堆叠的方法包括沉积在基板上并且在其表面上包括无机材料掩模的多晶Si1-xGex层和多晶Si层，其包括主蚀刻步骤，其中 使用所述掩模，通过由氯（Cl 2）和氮（N 2）或氨（NH 3）或由氮（N 2）或氨（NH 3）组成的气体混合物的高密度气体等离子体对所述层或所述堆叠进行各向异性蚀刻 氮/氨混合物。