发明授权
- 专利标题： Method to improve the uniformity of chemical mechanical polishing
- 专利标题（中）： 提高化学机械抛光均匀性的方法
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申请号： US09216022申请日： 1998-12-16
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公开(公告)号： US06284647B1公开(公告)日： 2001-09-04
- 发明人: Sun-Chieh Chien , Chien-Li Kuo , Tzung-Han Lee , Wei-Wu Liao
- 申请人： Sun-Chieh Chien , Chien-Li Kuo , Tzung-Han Lee , Wei-Wu Liao
- 主分类号： H01L214163
- IPC分类号： H01L214163
摘要：
A method of enhancing chemical mechanical polishing uniformity is provided. In the fabrication of a shallow trench isolation structure, there are active area regions with different integration formed in a chip. The integration of the active area regions in the chip is computed according circuit designs by a program analysis. One of the active area regions with the highest integration is used as a basis, dummy mesas are formed in the other active area regions to adjust the integration of the chip.
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