发明授权
- 专利标题： Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
- 专利标题（中）： 存储器件及其制造方法，以及半导体器件的集成电路及其制造方法
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申请号： US09381987申请日： 1999-11-29
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公开(公告)号： US06285055B1公开(公告)日： 2001-09-04
- 发明人: Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
- 申请人： Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
- 优先权： JP10-27747 19980126; JP10-321377 19981028
- 主分类号： H01L29788
- IPC分类号： H01L29788
摘要：
While a storage region 15 has of many dispersed particulates (dots) (15a), the surface density of the particulates (15a) is set to be higher than that of structural holes (pin holes) produced in a tunnel insulating film (14a), or the number of the particulates (15a) in the storage region (15) is set to five or more. While a conduction region (13c) is formed by a polysilicon layer (13) having a surface roughness of 0.1 nm to 100 nm, the number of the particulates (15a) in the storage region (15) is set to be larger than the number of crystal grains in the conduction region (13c). Even when a defect such as a pin hole occurs in the tunnel insulating film (14a) and charges stored in a part of the particulates are leaked, the charges stored in the particulates formed in a region where no defect occurs are not leaked. Thus, information can be held for a long time.