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1.发明授权Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device 有权存储器件及其制造方法，以及半导体器件的集成电路及其制造方法公开(公告)号：US06285055B1
公开(公告)日：2001-09-04
申请号：US09381987
申请日：1999-11-29
申请人： Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
发明人： Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
IPC分类号： H01L29788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/8221 , H01L21/84 , H01L27/1203 , H01L29/7883 , H01L29/792
摘要： While a storage region 15 has of many dispersed particulates (dots) (15a), the surface density of the particulates (15a) is set to be higher than that of structural holes (pin holes) produced in a tunnel insulating film (14a), or the number of the particulates (15a) in the storage region (15) is set to five or more. While a conduction region (13c) is formed by a polysilicon layer (13) having a surface roughness of 0.1 nm to 100 nm, the number of the particulates (15a) in the storage region (15) is set to be larger than the number of crystal grains in the conduction region (13c). Even when a defect such as a pin hole occurs in the tunnel insulating film (14a) and charges stored in a part of the particulates are leaked, the charges stored in the particulates formed in a region where no defect occurs are not leaked. Thus, information can be held for a long time.
摘要翻译： 虽然存储区域15具有许多分散的微粒（点）（15a），但是微粒（15a）的表面密度被设定为高于在隧道绝缘膜（14a）中产生的结构孔（针孔）的表面密度， 或存储区域（15）中的微粒（15a）的数量设定为五个以上。 虽然通过表面粗糙度为0.1nm至100nm的多晶硅层（13）形成导电区域（13c），但存储区域（15）中的微粒（15a）的数量被设定为大于数字 的导电区域（13c）中的晶粒。 即使当在隧道绝缘膜（14a）中出现诸如针孔的缺陷，并且存储在一部分微粒中的电荷泄漏时，存储在形成于不发生缺陷的区域中的微粒中的电荷也不会泄漏。 因此，信息可以持续很长时间。
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公开(公告)号：US06376290B1
公开(公告)日：2002-04-23
申请号：US09116119
申请日：1998-07-16
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/78603
摘要： A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers are each radiated with a pulse laser beam for removing volatile contaminants like a resist as a pretreatment. Damage to the film caused by a gas emitted from the base substrate and the insulating layers resulting from volatile contaminants is thus prevented. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. It is possible to increase energy intensity of energy beam radiated for polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.
摘要翻译： 提供了一种用于形成半导体薄膜的方法，该半导体薄膜不会损坏具有用于完美多晶化的最佳能量值的脉冲激光束的辐射。 为了形成非晶硅薄膜，以用作去除挥发性污染物如抗蚀剂的脉冲激光束作为基底和绝缘层的塑料基板的表面各自辐射，作为预处理。 因此防止了由基底衬底发出的气体和由挥发性污染物引起的绝缘层引起的膜损伤。 在基板上形成包括阻气层和难熔缓冲层的保护层。 从而防止了从基板到非晶硅膜的气体渗透。 也可以防止能量束辐射产生的热量传导到基板上。 可以将非晶硅膜的多晶化辐射的能量束的能量强度提高到完美多晶化的最佳值。
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公开(公告)号：US06794673B2
公开(公告)日：2004-09-21
申请号：US10011736
申请日：2001-12-11
IPC分类号： H01L2906
CPC分类号： H01L29/66765 , H01L29/78603
摘要： An amorphous silicon thin film includes a plastic substrate as a base, and insulating layers are formed thereon each radiated with a pulse laser beam which removes volatile contaminants like a resist as a pretreatment. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. it is possible to increase energy intensity of energy beam radiated for the polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.
摘要翻译： 非晶硅薄膜包括作为基底的塑料基板，并且在其上形成绝缘层，各自用脉冲激光束辐射，该脉冲激光束除去作为预处理的抗蚀剂等挥发性污染物。 在基板上形成包括阻气层和难熔缓冲层的保护层。 从而防止了从基板到非晶硅膜的气体渗透。 也可以防止能量束辐射产生的热量传导到基板上。 可以将非晶硅膜的多晶化辐射的能量束的能量强度提高到完美多晶化的最佳值。
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4.发明申请Method of manufacturing a semiconductor device and a process of a thin film transistor 审中-公开制造半导体器件的方法和薄膜晶体管的工艺公开(公告)号：US20050085099A1
公开(公告)日：2005-04-21
申请号：US10976493
申请日：2004-10-29
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L27/12 , H01L29/786 , C30B1/00 , H01L21/36 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66765 , Y10S148/10
摘要： To enable radiating an optimum energy beam depending upon the structure of a substrate (whether a metallic film is formed or not) when an amorphous semiconductor film is crystallized and uniformly crystallizing the overall film, first, a photoresist film and the area of an N+ doped amorphous silicon film on the photoresist film are selectively removed by a lift-off method. Hereby, the amorphous silicon film is thicker in an area except an area over a metallic film (a gate electrode) than in the area over the metallic film. In this state, a laser beam is radiated. The N+ doped amorphous silicon film and an amorphous silicon film are melted by radiating a laser beam and afterward, melted areas are crystallized by cooling them to room temperature. As the amorphous silicon film is thicker in the area except the area under which the metallic film (the gate electrode) is formed than in the area under which the metallic film is formed, the maximum temperature of the surface of the film is equal and the overall film can be uniformly crystallized.
摘要翻译： 为了使得当非晶半导体膜结晶并使整个膜均匀结晶时，根据衬底的结构（无论是否形成金属膜）来发射最佳能量束，首先，光致抗蚀剂膜和N < 通过剥离法选择性地去除光致抗蚀剂膜上的超掺杂非晶硅膜。 因此，非金属硅膜在金属膜（栅电极）以外的区域中比在金属膜上的区域以外的区域更厚。 在这种状态下，激光束被辐射。 通过照射激光束使掺杂N +非晶硅膜和非晶硅膜熔融，之后将其冷却至室温使熔融区域结晶化。 由于除了形成金属膜（栅电极）的区域以外的区域中，非晶硅膜比在形成金属膜的区域内的区域更厚，所以膜的表面的最高温度相等，并且 整体膜可均匀结晶。
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5.发明授权Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate 失效在基板上形成的量子线，其制造方法以及在基板上具有量子线的器件
公开(公告)号：US6130142A
公开(公告)日：2000-10-10
申请号：US376256
申请日：1999-08-18
CPC分类号： C30B25/005 , C30B11/12 , C30B25/04 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02653 , B82Y15/00 , H01L33/06 , Y10S438/962 , Y10S977/874 , Y10S977/875 , Y10S977/879
摘要： While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450.degree.-650.degree. C. in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.
摘要翻译： 当加热硅衬底时，在其上蒸发金，其厚度为0.6nm，由此在衬底表面上形成熔融的合金液滴。 然后，硅基板在小于0.5托的硅烷气体气氛中加热至450℃-650℃。 结果，熔融的合金液滴作为催化剂发生硅烷气体分解反应，由此硅线在基板表面上生长。 随后，除去硅线末端的金属合金液滴，使硅线的表面部分氧化。 然后除去所得的表面氧化膜。 结果，获得了通过表面氧化膜的厚度变薄的硅量子线。
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公开(公告)号：US6130143A
公开(公告)日：2000-10-10
申请号：US376908
申请日：1999-08-18
CPC分类号： C30B25/005 , C30B11/12 , C30B25/04 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02653 , B82Y15/00 , H01L33/06 , Y10S438/962 , Y10S977/874 , Y10S977/875 , Y10S977/879
摘要： While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450.degree.-650.degree. C. in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.
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公开(公告)号：US5976957A
公开(公告)日：1999-11-02
申请号：US956081
申请日：1997-10-24
CPC分类号： C30B25/005 , C30B11/12 , C30B25/04 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02653 , B82Y15/00 , H01L33/06 , Y10S438/962 , Y10S977/874 , Y10S977/875 , Y10S977/879
摘要： While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450.degree.-650.degree. C. in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.
摘要翻译： 当加热硅衬底时，在其上蒸发金，其厚度为0.6nm，由此在衬底表面上形成熔融的合金液滴。 然后，硅基板在小于0.5托的硅烷气体气氛中加热至450℃-650℃。 结果，熔融的合金液滴作为催化剂发生硅烷气体分解反应，由此硅线在基板表面上生长。 随后，除去硅线末端的金属合金液滴，使硅线的表面部分氧化。 然后除去所得的表面氧化膜。 结果，获得了通过表面氧化膜的厚度变薄的硅量子线。
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公开(公告)号：US06645837B2
公开(公告)日：2003-11-11
申请号：US09871033
申请日：2001-05-31
IPC分类号： H01L21425
CPC分类号： H01L29/66757 , H01L27/12
摘要： A polycrystalline silicon layer is formed on a substrate. An insulating layer and a gate electrode are formed on the polycrystalline silicon layer. Then, a channel region, a source region and a drain region are formed in a self-aligned manner by doping an impurity in the polycrystalline silicon layer using the gate electrode as a mask. Then, an energy absorption layer is formed so as to cover the entire substrate and a pulsed laser beam is irradiated from the energy absorption layer side. The energy of the pulsed laser beam is almost completely absorbed in the energy absorption layer and a heat treatment is indirectly performed on the underlying layers by radiating the heat. In other words, activation of the impurity and removal of defects in the insulating layer are performed at the same time without damaging the substrate by the heat.
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9.发明授权Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor 失效制造半导体器件的方法和制造薄膜晶体管的工艺
公开(公告)号：US6093586A
公开(公告)日：2000-07-25
申请号：US902069
申请日：1997-07-29
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L27/12 , H01L29/786 , H01L21/84
CPC分类号： H01L29/66765 , H01L21/2026 , Y10S148/10
摘要： To enable radiating an optimum energy beam depending upon the structure of a substrate (whether a metallic film is formed or not) when an amorphous semiconductor film is crystallized and uniformly crystallizing the overall film, first, a photoresist film and the area of an N.sup.+ doped amorphous silicon film on the photoresist film are selectively removed by a lift-off method. Hereby, the amorphous silicon film is thicker in an area except an area over a metallic film (a gate electrode) than in the area over the metallic film. In this state, a laser beam is radiated. The N.sup.+ doped amorphous silicon film and an amorphous silicon film are melted by radiating a laser beam and afterward, melted areas are crystallized by cooling them to room temperature. As the amorphous silicon film is thicker in the area except the area under which the metallic film (the gate electrode) is formed than in the area under which the metallic film is formed, the maximum temperature of the surface of the film is equal and the overall film can be uniformly crystallized.
摘要翻译： 为了使无定形半导体膜结晶化和整个膜均匀结晶时，根据衬底的结构（无论是否形成金属膜），能够发射最佳能量束，首先，光致抗蚀剂膜和N +掺杂的面积 通过剥离法选择性地去除光致抗蚀剂膜上的非晶硅膜。 因此，非金属硅膜在金属膜（栅电极）以外的区域中比在金属膜上的区域以外的区域更厚。 在这种状态下，激光束被辐射。 通过照射激光束使N +掺杂的非晶硅膜和非晶硅膜熔融，然后将其冷却至室温使熔融区域结晶。 由于除了形成金属膜（栅电极）的区域以外的区域中，非晶硅膜比在形成金属膜的区域内的区域更厚，所以膜的表面的最高温度相等，并且 整体膜可均匀结晶。
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公开(公告)号：US5953595A
公开(公告)日：1999-09-14
申请号：US721948
申请日：1996-09-27
IPC分类号： G03F7/42 , H01L21/027 , H01L21/306 , H01L21/336 , H01L29/786 , H01L21/00
CPC分类号： H01L29/66765 , G03F7/42 , H01L21/02046 , H01L21/0272 , H01L29/78621 , Y10S438/949
摘要： The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern on a ground surface, a second process of forming a thin film on the ground surface and a surface of the resist pattern, and a third process of removing the resist pattern to selectively remove the thin film deposited on the former, i.e., carrying out the lift-off, thereby the thin film process for a desired pattern being carried out.
摘要翻译： 可以简化制造工序，提高可靠性。 一种处理薄膜的方法包括在地表面上选择性地形成抗蚀剂图案的第一工艺，在地表面上形成薄膜的第二工艺和抗蚀剂图案的表面，以及除去抗蚀剂的第三工艺 以选择性地去除沉积在前者上的薄膜，即进行剥离，从而进行所需图案的薄膜处理。
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