公开(公告)号：US06806505B2

公开(公告)日：2004-10-19

申请号：US10180827

申请日：2002-06-26

申请人： Shigeru Kojima ,  Katsuya Shirai ,  Yoshifumi Mori ,  Atsushi Toda

发明人： Shigeru Kojima ,  Katsuya Shirai ,  Yoshifumi Mori ,  Atsushi Toda

IPC分类号： H01L2967

CPC分类号： H01L33/08 ,  H01L33/18 ,  H01L33/26 ,  H01L51/5203 ,  H01S5/32341

摘要： There is provided a light emitting device and a process for producing the same in that the light emission efficiency is high, the range of selection of the material is broad, and a device array of a large area can be formed. On a substrate 11 comprising quartz glass, an n-type clad layer 12 comprising a non-single crystal body of n-type AlGaN, a light emitting layer 13 containing plural microcrystals 13a comprising ZnO, and a p-type clad layer 14 comprising a non-single crystal body of p-type BN are laminated in this order. Between the n-type clad layer 12 and the p-type clad layer 14, an insulating layer 15 is formed to fill the gap among the microcrystals 13a to prevent a leaking electric current. The insulating layer 15 is formed by oxidizing the surface of the n-type clad layer 12. Because the light emitting layer 13 contains the plural microcrystals 13a having an increased crystallinity, the light emission efficiency is increased, the range of selection of the materials of the light emitting layer 13, the n-type clad layer 12, the p-type clad layer 14 and the substrate 11 is broadened, and a device array of a large area can be formed.

摘要翻译： 提供了一种发光器件及其制造方法，其发光效率高，材料选择范围宽，可以形成大面积的器件阵列。 在包括石英玻璃的衬底11上，包括n型AlGaN的非单晶体的n型覆盖层12，包含多个包含ZnO的微晶体13a的发光层13和包含ZnO的p型覆盖层14 依次层叠p型BN的非单晶体。 在n型覆盖层12和p型覆盖层14之间形成绝缘层15，以填充微晶13a之间的间隙，以防止漏电。 绝缘层15通过氧化n型覆盖层12的表面而形成。由于发光层13含有具有增加的结晶度的多个微晶13a，所以发光效率提高，材料的选择范围 发光层13，n型覆盖层12，p型覆盖层14和基板11变宽，可以形成大面积的元件阵列。

公开(公告)号：US06285055B1

公开(公告)日：2001-09-04

申请号：US09381987

申请日：1999-11-29

申请人： Dharam Pal Gosain ,  Kazumasa Nomoto ,  Jonathan Westwater ,  Miyako Nakagoe ,  Setsuo Usui ,  Takashi Noguchi ,  Yoshifumi Mori

发明人： Dharam Pal Gosain ,  Kazumasa Nomoto ,  Jonathan Westwater ,  Miyako Nakagoe ,  Setsuo Usui ,  Takashi Noguchi ,  Yoshifumi Mori

IPC分类号： H01L29788

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/7883 ,  H01L29/792

摘要： While a storage region 15 has of many dispersed particulates (dots) (15a), the surface density of the particulates (15a) is set to be higher than that of structural holes (pin holes) produced in a tunnel insulating film (14a), or the number of the particulates (15a) in the storage region (15) is set to five or more. While a conduction region (13c) is formed by a polysilicon layer (13) having a surface roughness of 0.1 nm to 100 nm, the number of the particulates (15a) in the storage region (15) is set to be larger than the number of crystal grains in the conduction region (13c). Even when a defect such as a pin hole occurs in the tunnel insulating film (14a) and charges stored in a part of the particulates are leaked, the charges stored in the particulates formed in a region where no defect occurs are not leaked. Thus, information can be held for a long time.

摘要翻译： 虽然存储区域15具有许多分散的微粒（点）（15a），但是微粒（15a）的表面密度被设定为高于在隧道绝缘膜（14a）中产生的结构孔（针孔）的表面密度， 或存储区域（15）中的微粒（15a）的数量设定为五个以上。 虽然通过表面粗糙度为0.1nm至100nm的多晶硅层（13）形成导电区域（13c），但存储区域（15）中的微粒（15a）的数量被设定为大于数字 的导电区域（13c）中的晶粒。 即使当在隧道绝缘膜（14a）中出现诸如针孔的缺陷，并且存储在一部分微粒中的电荷泄漏时，存储在形成于不发生缺陷的区域中的微粒中的电荷也不会泄漏。 因此，信息可以持续很长时间。

公开(公告)号：US5156988A

公开(公告)日：1992-10-20

申请号：US757605

申请日：1991-09-11

申请人： Yoshifumi Mori ,  Akira Ishibashi

发明人： Yoshifumi Mori ,  Akira Ishibashi

IPC分类号： H01J9/02 ,  H01J21/10

CPC分类号： H01J21/105 ,  H01J9/025 ,  Y10S438/962

摘要： A method of making a quantum interference semiconductor device comprising the steps of forming a first semiconductor layer on a semi-insulating semiconductor substrate, forming a semi-insulating second semiconductor layer on the first semiconductor layer, forming a metal film so as to form a gate electrode on the second semiconductor layer, forming a first opening by selectively removing the metal film to form the gate electrode, forming a mask on the first opening and etching until midway in the film thickness direction of the semi-insulative second semiconductor layer by anitropic etching through said first opening and subsequently forming an etching until an upper surface of the semiconductor substrate by isotropic etching occurs so as to form a second opening into the semi-insulative second semiconductor layer and the first semiconductor layer which is continuous with the first opening portion and forming a cathode from the first semiconductor layer and a blocker made of the second semiconductor layer.

摘要翻译： 一种制造量子干涉半导体器件的方法，包括以下步骤：在半绝缘半导体衬底上形成第一半导体层，在第一半导体层上形成半绝缘的第二半导体层，形成金属膜以形成栅极 在第二半导体层上形成第一开口，通过选择性地去除金属膜以形成栅电极，在第一开口上形成掩模，并通过无孔蚀刻蚀刻直到半绝缘性第二半导体层的膜厚度方向的中间 通过所述第一开口并随后形成蚀刻，直到半导体衬底的上表面通过各向同性蚀刻发生，以形成到半绝缘性第二半导体层和与第一开口部分连续的第一半导体层的第二开口，以及 从第一半导体层形成阴极和由第二半导体层制成的阻挡层 半导体层。

公开(公告)号：US5123836A

公开(公告)日：1992-06-23

申请号：US386639

申请日：1989-07-31

申请人： Noriyuki Yoneda ,  Hidehiko Kudoh ,  Norio Iwamoto ,  Munekazu Nakamura ,  Chiaki Kojima ,  Kunio Kaneko ,  Yoshifumi Mori ,  Hideto Ishikawa ,  Hiroji Kawai

发明人： Noriyuki Yoneda ,  Hidehiko Kudoh ,  Norio Iwamoto ,  Munekazu Nakamura ,  Chiaki Kojima ,  Kunio Kaneko ,  Yoshifumi Mori ,  Hideto Ishikawa ,  Hiroji Kawai

IPC分类号： F23G5/50 ,  F23G7/06 ,  F23L7/00 ,  F23M5/08

CPC分类号： F23G7/06 ,  F23G5/50 ,  F23L7/002 ,  F23M5/08 ,  F23G2209/142

摘要： A method and apparatus for the combustion treatment of a toxic gas which forms microparticles by combustion are disclosed wherein the toxic gas is subjected to a combustion treatment in a specific combustion furnace where the combustion gas formed is brought into contact with an aqueous film flowing downwards on the inner wall of the furnace from the upper end portion thereof to the lower end portion thereof or with a cooled surface, and then optionally with aqueous droplets dispersed in the interior space of the furnace. The water captures the microparticles formed by combustion of the toxic gas and is discharged out of the furnace as a mixed flow with the combustion gas thus treated, and optionally the mixed flow is successively treated in a gas-liquid separator.

摘要翻译： 公开了一种燃烧处理通过燃烧形成微粒的有毒气体的方法和装置，其中有毒气体在特定燃烧炉中进行燃烧处理，其中形成的燃烧气体与向下流动的水性膜接触 炉的内壁从其上端部分到其下端部分或具有冷却的表面，然后任选地具有分散在炉的内部空间中的水滴。 水捕获由有毒气体燃烧形成的微粒，并与作为这样处理的燃烧气体的混合流体排出炉外，任选地，在气液分离器中连续处理混合流。

公开(公告)号：US4888622A

公开(公告)日：1989-12-19

申请号：US271911

申请日：1988-11-16

申请人： Akira Ishibashi ,  Kenji Funato ,  Yoshifumi Mori

发明人： Akira Ishibashi ,  Kenji Funato ,  Yoshifumi Mori

IPC分类号： H01L39/22 ,  H03K17/92

CPC分类号： H01L39/228

摘要： A superconducting electron device is disclosed, in which a pair of parallel superconducting channels each having a Josephson junction therein are provided between source and drain electrodes, and a gate electrode is provided to apply a voltage to the channels to make potentials at each channels different to each other. The current flow through channels is controlled by the application of a voltage to the gate electrode based on electrostatic Aharanov-Bohm effect. The device uses the coherency characteristics of the superconducting material, thus high speed switching operation can be achieved.

摘要翻译： 公开了一种超导电子器件，其中在源电极和漏电极之间设置一对均具有约瑟夫逊结的平行超导通道，并且提供栅电极以向通道施加电压，以使各通道的电位不同于 彼此。 通过通道的电流通过基于静电Aharanov-Bohm效应向栅电极施加电压来控制。 该器件采用超导材料的相干特性，可实现高速切换操作。

公开(公告)号：US4835579A

公开(公告)日：1989-05-30

申请号：US839712

申请日：1986-03-13

申请人： Akira Ishibashi ,  Yoshifumi Mori ,  Masao Itabashi

发明人： Akira Ishibashi ,  Yoshifumi Mori ,  Masao Itabashi

IPC分类号： H01L29/80 ,  H01L21/205 ,  H01L29/15 ,  H01L29/68 ,  H01L29/737

CPC分类号： H01L29/155 ,  H01L29/7376 ,  Y10S148/011 ,  Y10S148/056 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/119 ,  Y10S148/16

摘要： A semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer in which a plurality of different semiconductor layers, less than 8 monolayers, and containing a fraction or a binary compound semiconductor layers are alternately and epitaxially grown and a main current direction is selected to be in the direction perpendicular to the laminae of said superlattice layers.

摘要翻译： 公开了一种半导体装置，其中电子有源区的全部或一部分由超晶格结构半导体层形成，其中多个不同的半导体层（小于8个单层）并且包含一部分或二元化合物半导体层是 交替地并外延生长，并且主电流方向被选择为在垂直于所述超晶格层的层的方向上。

公开(公告)号：US3935328A

公开(公告)日：1976-01-27

申请号：US405733

申请日：1973-10-11

申请人： Takuo Sugano ,  Yoshifumi Mori

发明人： Takuo Sugano ,  Yoshifumi Mori

IPC分类号： H01L21/00 ,  H01L21/316 ,  H01L21/32 ,  H01L21/76 ,  H01L27/00 ,  B05D5/12

CPC分类号： H01L21/00 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/7605 ,  H01L27/00 ,  Y10S148/065 ,  Y10S148/085 ,  Y10S148/117 ,  Y10S148/118

摘要： Method for providing dielectric isolation of an epitaxial layer of a compound semiconductor or for providing separation and protection of pn-junction of a compound semiconductor by applying plasma oxidation.

摘要翻译： 提供化合物半导体的外延层的绝缘隔离或通过施加等离子体氧化来提供化合物半导体的pn结的分离和保护的方法。

公开(公告)号：US06584234B2

公开(公告)日：2003-06-24

申请号：US09977722

申请日：2001-10-15

申请人： Shoji Kanamaru ,  Yoshihiko Kuroki ,  Yoshifumi Mori ,  Ryuichi Ugajin ,  Hitoshi Kimura

发明人： Shoji Kanamaru ,  Yoshihiko Kuroki ,  Yoshifumi Mori ,  Ryuichi Ugajin ,  Hitoshi Kimura

IPC分类号： G06K936

CPC分类号： G06T5/10 ,  G06T5/002 ,  G06T2207/20056

摘要： An image processing apparatus capable of extracting widely viewed features of an entire image and speedily performing image processing, and a method and an information recording medium for such processing. Image data of an original image is obtained by imaging the entire original image with an image pickup unit at a time. An amplitude distribution of a signal is obtained from the image data by fast Fourier transform performed by a fast Fourier transform section of a signal processing unit. An amplitude replacement section replaces the amplitude distribution with a predetermined function using the distance from a center of a frequency plane as a parameter. An inverse fast Fourier transform section forms an image corresponding to the original image by inverse fast Fourier transform from a phase distribution of points obtained by the fast Fourier transform and from an amplitude distribution obtained by the above-described replacement.

公开(公告)号：US5373173A

公开(公告)日：1994-12-13

申请号：US62209

申请日：1993-05-18

申请人： Toyoharu Ohata ,  Masamichi Ogawa ,  Kazuhiko Nemoto ,  Yoshifumi Mori

发明人： Toyoharu Ohata ,  Masamichi Ogawa ,  Kazuhiko Nemoto ,  Yoshifumi Mori

IPC分类号： H01S5/02 ,  H01S5/028 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32 ,  H01L33/00

CPC分类号： H01S5/18 ,  H01S5/0205 ,  H01S5/028 ,  H01S5/2201 ,  H01S5/3202

摘要： A light emitting element having a semiconductor substrate having {100} crystal surface as a major surface, a light emitting element formed on the semiconductor substrate, a growth blocking layer formed on a resonator end face of the light emitting element, a regrown layer formed on the light emitting element, a reflection mirror opposed to the resonator end face, a first electrode in contact with said semiconductor substrate, and a second electrode formed on the regrown layer, in which the regrown layer is made of the same material as that of the reflection mirror and the reflection mirror is formed of a semiconductor formed of {110} crystal surface epitaxially grown.

摘要翻译： 具有具有{100}晶体表面作为主表面的半导体衬底的发光元件，形成在半导体衬底上的发光元件，形成在发光元件的谐振器端面上的生长阻挡层，形成在 发光元件，与谐振器端面相对的反射镜，与所述半导体衬底接触的第一电极和形成在再生长层上的第二电极，其中再生长层由与第二电极材料相同的材料制成 反射镜和反射镜由外延生长的{110}晶面形成的半导体形成。

公开(公告)号：US5171718A

公开(公告)日：1992-12-15

申请号：US639325

申请日：1991-01-09

申请人： Akira Ishibashi ,  Yoshifumi Mori ,  Kenji Funato

发明人： Akira Ishibashi ,  Yoshifumi Mori ,  Kenji Funato

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/004 ,  G03F7/2041 ,  Y10S148/10 ,  Y10S148/131 ,  Y10S148/137 ,  Y10S438/949

摘要： A fine pattern formation using an electron beam induced resist, and use of the resist in making semiconductor devices are disclosed. Collimated electron beam is irradiated and scanned along a desired pattern on a layer on which a resist layer of a desired pattern is deposited under an atmosphere containing a starting material layer for the resist. The resist thus deposited is partially removed by reactive ion etching to remove the skirt like portion of the resist layer, or totally removed by reactive ion etching during or after processing by using the resist layer as a processing mask. Since the resist layer width is determined by a diameter of the collimated electron beam, line width of less than hundred .ANG. can be directly drawn. There are also disclosed processes using the resist layer in manufacturing semiconductor devices.

摘要翻译： 公开了使用电子束感应抗蚀剂的精细图案形成，以及在制造半导体器件中使用抗蚀剂。 沿着期望的图案沿着期望的图案照射准直的电子束，在其上沉积有所需图案的抗蚀剂层的层上，在含有抗蚀剂的起始材料层的气氛下。 通过反应离子蚀刻部分去除由此沉积的抗蚀剂以去除抗蚀剂层的裙状部分，或者通过使用抗蚀剂层作为处理掩模在处理期间或之后通过反应离子蚀刻完全除去。 由于抗蚀剂层宽度由准直电子束的直径确定，所以可以直接绘制小于100的棱线宽度。 还公开了在制造半导体器件中使用抗蚀剂层的工艺。