发明授权
- 专利标题： Dual slurry particle sizes for reducing microscratching of wafers
- 专利标题（中）： 用于减少晶片显微镜的双重浆料粒径
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申请号： US09576750申请日： 2000-05-23
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公开(公告)号： US06294472B1公开(公告)日： 2001-09-25
- 发明人: Jonathan B. Smith , Paul R. Besser , Jeremy I. Martin
- 申请人： Jonathan B. Smith , Paul R. Besser , Jeremy I. Martin
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A method includes providing at least one wafer having a process layer formed thereon for polishing. The process layer is polished using a first polishing process that is associated with a slurry having a first abrasive particle size. The process layer is polished using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon for polishing. The polishing tool is adapted to polish the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size. The polishing tool is adapted to polish the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. The process controller is coupled to the polishing tool and adapted to communicate with at least one of a slurry controller and the polishing tool.