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8 条记录 (耗时 0.016 秒)

    Dual slurry particle sizes for reducing microscratching of wafers
    4.
    发明授权
    Dual slurry particle sizes for reducing microscratching of wafers 有权
    用于减少晶片显微镜的双重浆料粒径

    公开(公告)号：US06294472B1

    公开(公告)日：2001-09-25

    申请号：US09576750

    申请日：2000-05-23

    申请人： Jonathan B. Smith ,  Paul R. Besser ,  Jeremy I. Martin

    发明人： Jonathan B. Smith ,  Paul R. Besser ,  Jeremy I. Martin

    IPC分类号： H01L2100

    CPC分类号： C09G1/02 ,  B24B37/044 ,  B24B57/02 ,  H01L21/30625

    摘要： A method includes providing at least one wafer having a process layer formed thereon for polishing. The process layer is polished using a first polishing process that is associated with a slurry having a first abrasive particle size. The process layer is polished using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon for polishing. The polishing tool is adapted to polish the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size. The polishing tool is adapted to polish the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. The process controller is coupled to the polishing tool and adapted to communicate with at least one of a slurry controller and the polishing tool.

    摘要翻译： 一种方法包括提供至少一个晶片，其上形成有用于抛光的工艺层。 使用与具有第一研磨粒度的浆料相关联的第一抛光工艺来抛光工艺层。 使用与具有不同于第一磨料颗粒尺寸的第二磨料颗粒尺寸的浆料相关联的第二抛光方法来抛光工艺层。 系统包括抛光工具和过程控制器。 抛光工具适于接收至少一个晶片，其上形成有用于抛光的工艺层。 抛光工具适于使用与具有第一研磨粒度的浆料相关联的第一抛光工艺来抛光工艺层。 抛光工具适于使用与具有不同于第一磨料颗粒尺寸的第二磨料颗粒尺寸的浆料相关联的第二抛光工艺来抛光工艺层。 过程控制器耦合到抛光工具并且适于与浆料控制器和抛光工具中的至少一个连通。

    Method of exhaust control for spin-on films with reduced defects
    6.
    发明授权
    Method of exhaust control for spin-on films with reduced defects 失效
    具有减少缺陷的旋涂膜的排气控制方法

    公开(公告)号：US5985364A

    公开(公告)日：1999-11-16

    申请号：US55258

    申请日：1998-04-06

    申请人： Jonathan B. Smith ,  C. Bradford Hopper

    发明人： Jonathan B. Smith ,  C. Bradford Hopper

    IPC分类号： B05D1/00 ,  B05D3/04 ,  H01L21/00 ,  B05D3/12

    CPC分类号： H01L21/6715 ,  B05D1/005 ,  B05D3/0493

    摘要： Spin-on coatings are applied by ramping-up the exhaust level in the spin coating chamber to achieve a predetermined minimum exhaustion level prior to accelerating rotation of the coating substrate to a high speed to effect spreading of the coating fluid. The resulting spun-on coatings exhibit reduced defect formation and reduced aerosol particle redeposition thereon.

    摘要翻译： 旋涂涂层通过在旋转涂层室中升高废气水平来施加，以在涂覆基材加速旋转之前达到预定的最小消耗水平以实现涂布液的扩散。 所得的旋涂涂层表现出减少的缺陷形成和减少的气溶胶颗粒再沉积。

    Photoresist removal using a polishing tool
    7.
    发明授权
    Photoresist removal using a polishing tool 有权
    使用抛光工具去除光刻胶

    公开(公告)号：US06315637B1

    公开(公告)日：2001-11-13

    申请号：US09484601

    申请日：2000-01-18

    申请人： Eric M. Apelgren ,  Jonathan B. Smith ,  Paul R. Besser

    发明人： Eric M. Apelgren ,  Jonathan B. Smith ,  Paul R. Besser

    IPC分类号： B24B100

    CPC分类号： H01L21/31058 ,  B24B37/042

    摘要： The present invention is directed to semiconductor processing operations. In one illustrative embodiment, the invention comprises providing a wafer having a layer of photoresist formed thereabove, positioning the layer of photoresist in contact with a polishing pad or a polishing tool, and rotating at least one of the wafer and the polishing pad to remove substantially all of the layers of photoresist.

    摘要翻译： 本发明涉及半导体处理操作。 在一个说明性实施例中，本发明包括提供具有在其上形成的光致抗蚀剂层的晶片，将光致抗蚀剂层定位成与抛光垫或抛光工具接触，并且旋转晶片和抛光垫中的至少一个，以基本上去除 所有的光刻胶层。

    Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devices
    8.
    发明授权
    Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devices 有权
    阻挡金属层反向电镀以提高铜互连器件的电迁移性能

    公开(公告)号：US06261963B1

    公开(公告)日：2001-07-17

    申请号：US09611729

    申请日：2000-07-07

    申请人： Larry Zhao ,  Paul R. Besser ,  Eric M. Apelgren ,  Christian Zistl ,  Jonathan B. Smith

    发明人： Larry Zhao ,  Paul R. Besser ,  Eric M. Apelgren ,  Christian Zistl ,  Jonathan B. Smith

    IPC分类号： H01L21302

    CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76877 ,  Y10S438/927

    摘要： A method is provided for forming a conductive interconnect, the method comprising forming a first dielectric layer above a structure layer, forming a first opening in the first dielectric layer, and forming a first conductive structure in the first opening. The method also comprises forming a second dielectric layer above the first dielectric layer and above the first conductive structure, forming a second opening in the second dielectric layer above at least a portion of the first conductive structure, the second opening having a side surface and a bottom surface, and forming at least one barrier metal layer in the second opening on the side surface and on the bottom surface. In addition, the method comprises removing a portion of the at least one barrier metal layer from the bottom surface, and forming a second conductive structure in the second opening, the second conductive structure contacting the at least the portion of the first conductive structure. The method further comprises forming the conductive interconnect by annealing the second conductive structure and the first conductive structure.

    摘要翻译： 提供了一种用于形成导电互连的方法，所述方法包括在结构层上形成第一介电层，在第一介电层中形成第一开口，并在第一开口中形成第一导电结构。 该方法还包括在第一介电层之上和第一导电结构之上形成第二电介质层，在第二导电结构的至少一部分上方的第二电介质层中形成第二开口，第二开口具有侧表面和 并且在侧表面和底表面上的第二开口中形成至少一个阻挡金属层。 此外，该方法包括从底表面去除至少一个阻挡金属层的一部分，以及在第二开口中形成第二导电结构，第二导电结构与第一导电结构的至少一部分接触。 该方法还包括通过使第二导电结构和第一导电结构退火来形成导电互连。