发明授权
US06300145B1 Ion implantation and laser anneal to create n-doped structures in silicon
失效
离子注入和激光退火以在硅中产生n掺杂结构
- 专利标题： Ion implantation and laser anneal to create n-doped structures in silicon
- 专利标题（中）： 离子注入和激光退火以在硅中产生n掺杂结构
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申请号： US09408051申请日： 1999-09-29
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公开(公告)号： US06300145B1公开(公告)日： 2001-10-09
- 发明人: Jeffrey D. Birdsley , Rama R. Goruganthu , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
- 申请人： Jeffrey D. Birdsley , Rama R. Goruganthu , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
- 主分类号： H01L2166
- IPC分类号： H01L2166
摘要：
The present invention is directed to a method for post-manufacturing analysis of a semiconductor device including a die in a semiconductor device package. According to an example embodiment of the present invention, the package is removed and the die is exposed. Conductive ions are impregnated in a region of the die and a diode is formed. Using the formed diode, target circuitry within the die is analyzed. In this manner, a diode can be formed and used for purposes such as testing or repairing a die.
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