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    Wide area soft defect localization
    1.
    发明授权
    Wide area soft defect localization 有权
    广域软缺陷定位

    公开(公告)号：US07884633B2

    公开(公告)日：2011-02-08

    申请号：US12133305

    申请日：2008-06-04

    申请人： Ronald M. Potok ,  Rama R. Goruganthu ,  David E. Kloster ,  Norman E. Rhodes

    发明人： Ronald M. Potok ,  Rama R. Goruganthu ,  David E. Kloster ,  Norman E. Rhodes

    IPC分类号： G01R31/26

    CPC分类号： G01R31/311

    摘要： Various apparatus and methods of testing a semiconductor chip for soft defects are disclosed. In one aspect, a method of testing a semiconductor chip that has a surface and plural circuit structures positioned beneath the surface is provided. An external stimulus is applied to a series of fractional portions of the surface to perturb portions of the plural circuit structures such that at least one of the series of fractional portions is smaller than another of the series of fractional portions. The semiconductor chip is caused to perform a test pattern during the application of external stimulus to each of the fractional portions to determine if a soft defect exists in any of the series of fractional portions.

    摘要翻译： 公开了测试用于软缺陷的半导体芯片的各种装置和方法。 在一个方面，提供一种测试半导体芯片的方法，该半导体芯片具有位于表面下方的表面和多个电路结构。 外部刺激被施加到表面的一系列分数部分以扰乱多个电路结构的部分，使得该系列分数部分中的至少一个小于该系列分数部分中的另一个。 使半导体芯片在向每个分数部分施加外部刺激期间执行测试图案，以确定在任何一系列分数部分中是否存在软缺陷。

    High resolution heat exchange
    2.
    发明授权
    High resolution heat exchange 失效
    高分辨率热交换

    公开(公告)号：US06836132B1

    公开(公告)日：2004-12-28

    申请号：US10113604

    申请日：2002-03-29

    申请人： Michael R. Bruce ,  David H. Eppes ,  Rama R. Goruganthu

    发明人： Michael R. Bruce ,  David H. Eppes ,  Rama R. Goruganthu

    IPC分类号： G01R3128

    CPC分类号： H01L22/20 ,  G01K7/015 ,  G01R31/303

    摘要： A semiconductor device is analyzed and manufactured using a heat-exchange probe. According to an example embodiment of the present invention, a heat-exchange probe is controlled to exchange heat to a portion of a semiconductor device using sub-micron resolution. In one implementation, sub-micron resolution is achieved using a navigational arrangement, such as microscope, adapted to direct light to within about one micron of a target circuit portion on a plane of the device. In another implementation, a physical heat probe tip (e.g., a metal probe having about a one micron diameter probe tip) is navigated to a selected portion of the device using sub-micron navigational resolution. In each of these implementations, as well as others, the heat exchange is preponderantly confined to within about a one micron radius of a target portion of circuitry on lateral plane of the device. With this approach, heat exchange can be controlled to selectively stimulate circuitry within the device, which is particularly useful in high-density circuit implementations.

    摘要翻译： 使用热交换探针分析和制造半导体器件。 根据本发明的示例性实施例，控制热交换探针以使用亚微米分辨率将热量交换到半导体器件的一部分。 在一个实施方案中，使用诸如显微镜的导航装置来实现亚微米分辨率，其适于将光引导到设备平面上的目标电路部分的约一微米内。 在另一个实施方案中，使用亚微米导航分辨率将物理热探针尖端（例如，具有约一微米直径的探针尖端的金属探针）导航到装置的选定部分。 在这些实施方案的每一个以及其它实施方案中，热交换主要被限制在装置的横向平面上的电路的目标部分的约一微米半径内。 利用这种方法，可以控制热交换以选择性地刺激装置内的电路，这在高密度电路实现中特别有用。

    Nanotube tip for atomic force microscope
    4.
    发明授权
    Nanotube tip for atomic force microscope 失效
    纳米管尖端用于原子力显微镜

    公开(公告)号：US06780664B1

    公开(公告)日：2004-08-24

    申请号：US10324327

    申请日：2002-12-20

    申请人： Rama R. Goruganthu ,  Michael R. Bruce ,  Thomas Chu ,  Miguel Santana, Jr. ,  Robert Powell

    发明人： Rama R. Goruganthu ,  Michael R. Bruce ,  Thomas Chu ,  Miguel Santana, Jr. ,  Robert Powell

    IPC分类号： H01L2100

    CPC分类号： G01Q70/12 ,  Y10S438/903 ,  Y10S977/876

    摘要： Various microscopy probes and methods of fabricating the same are provided. In one aspect, a method of fabricating a microscopy probe is provided that includes providing a member and forming a first film on the member. The first film fosters growth of carbon nanotubes when exposed to a carbon-containing compound. A second film is formed on the first film. The second film has an opening therein that exposes a portion of the first film. A carbon nanotube is formed on the exposed portion of the first film.

    摘要翻译： 提供了各种显微镜探针及其制造方法。 一方面，提供一种制造显微镜探针的方法，其包括提供构件并在构件上形成第一膜。 当暴露于含碳化合物时，第一种膜促进碳纳米管的生长。 在第一膜上形成第二膜。 第二膜在其中具有露出第一膜的一部分的开口。 在第一膜的暴露部分上形成碳纳米管。

    Magnetic resonance imaging of semiconductor devices
    5.
    发明授权
    Magnetic resonance imaging of semiconductor devices 失效
    半导体器件的磁共振成像

    公开(公告)号：US06529029B1

    公开(公告)日：2003-03-04

    申请号：US09409973

    申请日：1999-09-30

    申请人： Michael R. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

    发明人： Michael R. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

    IPC分类号： G01R3128

    CPC分类号： G01R31/303

    摘要： A method for detecting substrate damage in a flip chip die, having a back side and a circuit side, that uses magnetic resonance imaging. The back side of the die is first globally thinned down and a region for examination is selected. A magnetic field is applied to the selected region and then the region is scanned with a magnetic resonance imaging arrangement. A plurality of perturbations are measured to generate an array of perturbation signals, which are then converted to a local susceptibility map of the selected region of the die. The susceptibility map of the selected region is then examined to determine if there is any substrate damage.

    摘要翻译： 一种用于检测使用磁共振成像的具有背面和电路侧的倒装芯片的基板损伤的方法。 首先将模具的背面全局变薄，并选择检查区域。 将磁场施加到所选择的区域，然后用磁共振成像装置扫描该区域。 测量多个扰动以产生扰动信号阵列，然后将它们转换成所选择的模具区域的局部磁敏度图。 然后检查所选区域的磁敏度图，以确定是否存在任何底物损伤。

    Forming elongated probe points useful in testing semiconductor devices
    6.
    发明授权
    Forming elongated probe points useful in testing semiconductor devices 失效
    形成可用于测试半导体器件的细长探针点

    公开(公告)号：US06372529B1

    公开(公告)日：2002-04-16

    申请号：US09408616

    申请日：1999-09-30

    申请人： Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis ,  Jeffrey D. Birdsley ,  Michael R. Bruce

    发明人： Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis ,  Jeffrey D. Birdsley ,  Michael R. Bruce

    IPC分类号： G01R3126

    CPC分类号： G01R31/31905 ,  G01R3/00 ,  G01R31/2884

    摘要： Access to portions of semiconductor devices is enhanced via a method and system for probing between circuitry in the semiconductor device during post-manufacture analysis of the semiconductor device. According to an example embodiment of the present invention, an elongated conductive via probe is formed in a semiconductor device having circuitry in a circuit side opposite a back side. The probe is formed by first removing substrate from the semiconductor device and forming an exposed region over a target node between circuitry in the device. A narrow conductor is then formed for accessing the target node, with the conductor and extending between the circuitry and into the back side and forming the elongated conductive via probe. The probe is accessed and used for analyzing the device. In this manner, access to a difficult-to-reach target node, such as a node between closely-placed transistors, is facilitated.

    摘要翻译： 通过用于在半导体器件的后制造分析期间在半导体器件中的电路之间探测的方法和系统来增强对半导体器件的部分的访问。 根据本发明的示例性实施例，在具有在背侧相反的电路侧中的电路的半导体器件中形成细长的导电通孔探针。 通过首先从半导体器件去除衬底并在器件中的电路之间的目标节点上形成暴露区域来形成探针。 然后形成窄导体，用于与导体接合目标节点，并在电路之间延伸并进入后侧，并形成细长的导电通孔探针。 探头被访问并用于分析设备。 以这种方式，便于访问难以达到的目标节点，诸如紧密放置的晶体管之间的节点。

    Substrate removal as a function of SIMS analysis
    8.
    发明授权
    Substrate removal as a function of SIMS analysis 失效
    基板去除作为SIMS分析的功能

    公开(公告)号：US06281025B1

    公开(公告)日：2001-08-28

    申请号：US09409320

    申请日：1999-09-30

    申请人： Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis ,  Jeffrey D. Birdsley ,  Michael R. Bruce

    发明人： Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis ,  Jeffrey D. Birdsley ,  Michael R. Bruce

    IPC分类号： H01L2100

    CPC分类号： H01L22/26 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2924/15311

    摘要： Substrate removal for post-manufacturing analysis of a semiconductor device is enhanced via a method and system that utilizes ion beam etching, to etch the backside of a semiconductor chip, and utilizes SIMS as a detection technique to not only control removal of the substrate from the backside of the chip but also to determine the endpoint of the removal process. In an example embodiment there is described a method for removing substrate from the backside of a semiconductor chip as a function of detected concentration levels of a selected substrate material that is sputtered off of a region of the substrate.

    摘要翻译： 通过利用离子束蚀刻，蚀刻半导体芯片的背面的方法和系统来增强对半导体器件的后制造分析的衬底去除，并且利用SIMS作为检测技术，不仅可以控制从衬底的去除 芯片的背面还可以确定去除过程的终点。 在一个示例性实施例中，描述了从半导体芯片的背面去除衬底的方法，其作为从衬底区域溅射的所选择的衬底材料的检测浓度水平的函数。

    Optical isolation module and method for utilizing the same
    9.
    发明申请
    Optical isolation module and method for utilizing the same 有权
    光隔离模块及其使用方法

    公开(公告)号：US20110134520A1

    公开(公告)日：2011-06-09

    申请号：US12653235

    申请日：2009-12-09

    申请人： Rama R. Goruganthu

    发明人： Rama R. Goruganthu

    IPC分类号： G02F1/09 ,  G02B21/06

    CPC分类号： G02F1/093 ,  G01N21/956 ,  G02B21/0016 ,  G02B21/10 ,  G02B27/28 ,  G02F2201/58 ,  G02F2203/07

    摘要： According to one embodiment, an optical isolation module comprises first and second linear polarizers, a Faraday rotator situated between the first and second linear polarizers and a transmissive element including a half-wave plate also situated between the first and second linear polarizers. In one embodiment, a method for performing optical isolation comprises rotating an axis of polarization of a linearly polarized light beam by a first rotation in a first direction, and selectively rotating a portion of the linearly polarized light beam by a second rotation in the first direction to produce first and second linearly polarized light beam portions. As a result, the first linearly polarized light beam portion undergoes the first rotation, and the second linearly polarized light beam portion undergoes the first and second rotations. The method further comprises filtering one of the first and second linearly polarized light beam portions to produce a light annulus.

    摘要翻译： 根据一个实施例，光隔离模块包括第一和第二线性偏振器，位于第一和第二线性偏振器之间的法拉第旋转器和包括也位于第一和第二线性偏振器之间的半波片的透射元件。 在一个实施例中，一种执行光学隔离的方法包括：使第一方向上的第一旋转使线性偏振光束的偏振轴旋转，并且通过第一方向上的第二旋转选择性地旋转一部分线偏振光束 以产生第一和第二直线偏振光束部分。 结果，第一直线偏振光束部分经历第一旋转，并且第二线偏振光束部分经历第一和第二旋转。 该方法还包括对第一和第二直线偏振光束部分之一进行滤波以产生光环。