发明授权
- 专利标题： Easy to manufacture integrated semiconductor memory configuration with platinum electrodes
- 专利标题（中）： 易于制造的集成半导体存储器配置采用铂电极
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申请号： US09282091申请日： 1999-03-30
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公开(公告)号： US06316802B1公开(公告)日： 2001-11-13
- 发明人: Günther Schindler , Walter Hartner , Frank Hintermaier , Carlos Mazure-Espejo , Rainer Bruchhaus , Wolfgang Hönlein , Manfred Engelhardt
- 申请人： Günther Schindler , Walter Hartner , Frank Hintermaier , Carlos Mazure-Espejo , Rainer Bruchhaus , Wolfgang Hönlein , Manfred Engelhardt
- 优先权： DE19640218 19960930
- 主分类号： H01L27108
- IPC分类号： H01L27108
摘要：
The integrated semiconductor memory configuration has a semiconductor body in which selection transistors and storage capacitors are integrated. The storage capacitors have a dielectric layer configured between two electrodes. At least the upper electrode is constructed in a layered manner with a platinum layer, that is seated on the dielectric layer, and a thicker, base metal layer lying above the platinum layer.
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