发明授权
- 专利标题: GaN type semiconductor device fabrication
- 专利标题(中): GaN型半导体器件制造
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申请号: US09525425申请日: 2000-03-14
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公开(公告)号: US06335217B1公开(公告)日: 2002-01-01
- 发明人: Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
- 申请人: Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
- 优先权: JP9-293463 19971010; JP10-105432 19980331
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.