发明授权
- 专利标题： GaN type semiconductor device fabrication
- 专利标题（中）： GaN型半导体器件制造
-
申请号： US09525425申请日： 2000-03-14
-
公开(公告)号： US06335217B1公开(公告)日： 2002-01-01
- 发明人: Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
- 申请人： Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
- 优先权： JP9-293463 19971010; JP10-105432 19980331
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.