A semiconductor device having a bottom electrode, a ferroelectric film, and a top electrode formed on a semiconductor substrate, wherein the angle of each of the main cross sectional sides of the ferroelectric film relative to the main surface of the semiconductor substrate is less than 75 degrees. Forming the ferroelectric film into the trapezoid in cross section having such an angle provides a microscopic capacitor without electrical short-circuit between the top and bottom electrodes if the top electrode, the ferroelectric film, and the bottom electrode are etched with single photolithography process step. The novel technique implements a microscopic memory cell structure suitable for highly integrated memory devices.