发明授权
US06342404B1 Group III nitride compound semiconductor device and method for producing
有权
III族氮化物化合物半导体器件及其制造方法
- 专利标题： Group III nitride compound semiconductor device and method for producing
- 专利标题（中）： III族氮化物化合物半导体器件及其制造方法
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申请号： US09522833申请日： 2000-03-10
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公开(公告)号： US06342404B1公开(公告)日： 2002-01-29
- 发明人: Naoki Shibata , Jun Ito , Toshiaki Chiyo , Shizuyo Asami , Hiroshi Watanabe , Shinya Asami
- 申请人： Naoki Shibata , Jun Ito , Toshiaki Chiyo , Shizuyo Asami , Hiroshi Watanabe , Shinya Asami
- 优先权： JP11-092948 19990331
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.
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