发明授权
- 专利标题: Detection of voids in semiconductor wafer processing
- 专利标题(中): 检测半导体晶片加工中的空隙
-
申请号: US09461670申请日: 1999-12-14
-
公开(公告)号: US06351516B1公开(公告)日: 2002-02-26
- 发明人: Isaac Mazor , Long Vu
- 申请人: Isaac Mazor , Long Vu
- 主分类号: G01N23223
- IPC分类号: G01N23223
摘要:
A method for testing the deposition and/or the removal of a material within a recess on the surface of a sample. An excitation beam is directed onto a region of the sample in a vicinity of the recess, and an intensity of X-ray fluorescence, emitted from the region in a spectral range in which the material is known to fluoresce, is measured. A quantity of the material that is deposited within the recess is determined responsive to the measured intensity.
信息查询