发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09786551申请日： 2001-03-07
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公开(公告)号： US06399993B1公开(公告)日： 2002-06-04
- 发明人: Teruhito Ohnishi , Akira Asai , Takeshi Takagi , Tohru Saitoh , Yo Ichikawa , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Koji Katayama , Yoshihiko Kanzawa
- 申请人： Teruhito Ohnishi , Akira Asai , Takeshi Takagi , Tohru Saitoh , Yo Ichikawa , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Koji Katayama , Yoshihiko Kanzawa
- 优先权： JP11-192706 19990707
- 主分类号： H01L2972
- IPC分类号： H01L2972
摘要：
In a bipolar transistor block, a base layer (20a) of SiGe single crystals and an emitter layer (26) of almost 100% of Si single crystals are stacked in this order over a collector diffused layer (9). Over both edges of the base layer (20a), a base undercoat insulating film (5a) and base extended electrodes (22) made of polysilicon are provided. The base layer (20a) has a peripheral portion with a thickness equal to that of the base undercoat insulating film (5a) and a center portion thicker than the peripheral portion. The base undercoat insulating film (5a) and gate insulating films (5b and 5c) for a CMOS block are made of the same oxide film. A stress resulting from a difference in thermal expansion coefficient between the SiGe layer as the base layer and the base undercoat insulating film 5a can be reduced, and a highly reliable BiCMOS device is realized.