发明授权
US06403433B1 Source/drain doping technique for ultra-thin-body SOI MOS transistors
有权
超薄体SOI MOS晶体管的源极/漏极掺杂技术
- 专利标题： Source/drain doping technique for ultra-thin-body SOI MOS transistors
- 专利标题（中）： 超薄体SOI MOS晶体管的源极/漏极掺杂技术
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申请号： US09397217申请日： 1999-09-16
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公开(公告)号： US06403433B1公开(公告)日： 2002-06-11
- 发明人: Bin Yu , Jonathan Kluth , Emi Ishida
- 申请人： Bin Yu , Jonathan Kluth , Emi Ishida
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
An ultra-large-scale integrated (ULSI) circuit includes MOSFETs on an SOI substrate. The MOSFETs include elevated source and drain regions. The elevated source and drain regions are amorphized before doping. Neutral ion species can be utilized to amorphize the elevated source and drain region. Dopants are activated in a low-temperature rapid thermal anneal process.
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