发明授权
- 专利标题: Method for manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US09536447申请日: 2000-03-28
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公开(公告)号: US06403446B1公开(公告)日: 2002-06-11
- 发明人: Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Masayuki Kojima , Kota Funayama
- 申请人: Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Masayuki Kojima , Kota Funayama
- 优先权: JP10-216831 19980731
- 主分类号: H01L2176
- IPC分类号: H01L2176
摘要:
Manufacturing a semiconductor device avoiding an increase of transistor leak current or reduction of the withstanding voltage characteristics is by at least one of: The pad oxide film is removed along the substrate surface from the upper edge of the groove over a distance ranging from 5 to 40 nm: The exposed surface of the semiconductor substrate undergoes removal by isotropic etching within 20 nm; and oxidizing a groove portion formed in a semiconductor substrate in an oxidation environment with a gas ratio of hydrogen (H2) to oxygen (O2) being less than or equal to 0.5, an increase of the curvature radius beyond 3nm is achieved without associating the risk of creation of any level difference on the substrate surface at or near the upper groove edge portions in a groove separation structure. This eliminates either an increase of transistor leak current or reduction of the withstanding voltage characteristics thereof otherwise occurring due to local electric field concentration near or around the terminate ends of a gate electrode film which in turn leads to an ability to improve electrical reliability of transistors used.