发明授权
- 专利标题: Heat treatment method and heat treatment apparatus
- 专利标题(中): 热处理方法和热处理装置
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申请号: US09539216申请日: 2000-03-30
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公开(公告)号: US06414280B1公开(公告)日: 2002-07-02
- 发明人: Eisuke Nishitani , Katsuhisa Kasanami , Naoko Matsuyama , Shinya Sasaki
- 申请人: Eisuke Nishitani , Katsuhisa Kasanami , Naoko Matsuyama , Shinya Sasaki
- 优先权: JP11-093955 19990331
- 主分类号: F27D1100
- IPC分类号: F27D1100
摘要:
Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps 10 are provided outside the furnace body 3 of a hot-wall CVD apparatus. The hot-wall reactor furnace body 3 is preheated to a prescribed temperature. Wafers W are loaded into the furnace body 3, and these wafers W are rapidly heated immediately thereafter to the desired temperature by light emitted by the lamps 10. The lamps 10 are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body 3. It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body 3, the wafers W are then loaded into the reactor furnace body 3, and the wafer temperature is allowed to achieve a uniform state.