公开(公告)号：US06472639B2

公开(公告)日：2002-10-29

申请号：US10108432

申请日：2002-03-29

申请人： Eisuke Nishitani ,  Katsuhisa Kasanami ,  Naoko Matsuyama ,  Shinya Sasaki

发明人： Eisuke Nishitani ,  Katsuhisa Kasanami ,  Naoko Matsuyama ,  Shinya Sasaki

IPC分类号： F27B514

CPC分类号： H01L21/67115 ,  C30B25/105 ,  C30B31/12 ,  H01L21/67109

摘要： Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps 10 are provided outside the furnace body 3 of a hot-wall CVD apparatus. The hot-wall reactor furnace body 3 is preheated to a prescribed temperature. Wafers W are loaded into the furnace body 3, and these wafers W are rapidly heated mediately thereafter to the desired temperature by light emitted by the lamps 10. The lamps 10 are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body 3. It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body 3. the wafers W are then loaded into the reactor furnace body 3. and the water temperature is allowed to achieve a uniform state.

摘要翻译： 在晶片内形成均匀的温度，并且通过将灯加热与热壁加热组合来显着降低晶片加热时间，从而实现更高的通量。 灯10设置在热壁CVD装置的炉体3的外部。 将热壁反应炉体3预热至规定温度。 将晶片W装载到炉体3中，并且这些晶片W随后由灯10发出的光中等地迅速地加热到期望的温度。灯10在加热之后被切断，并且允许晶片温度达到均匀 由于在热壁反应炉体3中的晶片中的热扩散的结果，也可以采用这样的配置：在将晶片W装载到 炉体3.然后将晶片W装载到反应器炉体3中，并允许水温达到均匀的状态。

公开(公告)号：US06414280B1

公开(公告)日：2002-07-02

申请号：US09539216

申请日：2000-03-30

申请人： Eisuke Nishitani ,  Katsuhisa Kasanami ,  Naoko Matsuyama ,  Shinya Sasaki

发明人： Eisuke Nishitani ,  Katsuhisa Kasanami ,  Naoko Matsuyama ,  Shinya Sasaki

IPC分类号： F27D1100

CPC分类号： H01L21/67115 ,  C30B25/105 ,  C30B31/12 ,  H01L21/67109

摘要： Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps 10 are provided outside the furnace body 3 of a hot-wall CVD apparatus. The hot-wall reactor furnace body 3 is preheated to a prescribed temperature. Wafers W are loaded into the furnace body 3, and these wafers W are rapidly heated immediately thereafter to the desired temperature by light emitted by the lamps 10. The lamps 10 are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body 3. It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body 3, the wafers W are then loaded into the reactor furnace body 3, and the wafer temperature is allowed to achieve a uniform state.

摘要翻译： 在晶片内形成均匀的温度，并且通过将灯加热与热壁加热组合来显着降低晶片加热时间，从而实现更高的通量。 灯10设置在热壁CVD装置的炉体3的外部。 将热壁反应炉体3预热至规定温度。 晶片W被装载到炉体3中，并且这些晶片W之后立即被灯10发出的光迅速地加热到期望的温度。加热后关闭灯10，并使晶片温度达到均匀 由于在热壁反应炉体3中的晶片中的热扩散的结果，也可以采用这样的配置：在将晶片W装载到 炉体3，然后将晶片W装载到反应炉体3中，并且允许晶片温度达到均匀的状态。

公开(公告)号：US5239108A

公开(公告)日：1993-08-24

申请号：US963527

申请日：1992-10-20

申请人： Toshiharu Yokoyama ,  Naoko Matsuyama ,  Takao Maki

发明人： Toshiharu Yokoyama ,  Naoko Matsuyama ,  Takao Maki

IPC分类号： B01J23/26 ,  C07C45/41

CPC分类号： B01J23/26 ,  C07C45/41

摘要： A process for producing an aliphatic or alicyclic aldehyde is disclosed, which process comprises the step of hydrogenating an aliphatic or alicyclic carboxylic acid or a derivative thereof with molecular hydrogen in the presence of a catalyst, wherein the catalyst is a zirconium oxide catalyst which contains chromium as an essential component, has a weakly basic site amount of more than 0.03 mmol/g as determined by a temperature programmed desorption method using carbon dioxide as an adsorbate in which the amount of carbon dioxide desorbed in the temperature range of from 100.degree. to 250.degree. C. is measured, and has pores having a radius of from 20 to 500 .ANG. in an amount of not less than 0.1 cc/g and pores having a radius of from 1,000 to 50,000 .ANG. in an amount of not less than 0.05 cc/g as measured with a mercury porosimeter. Aldehydes can be obtained directly from aliphatic or alicyclic carboxylic acids or derivatives thereof in high yield.

摘要翻译： 公开了一种制备脂族或脂环醛的方法，该方法包括在催化剂存在下用分子氢氢化脂族或脂环族羧酸或其衍生物的步骤，其中催化剂是含有铬的氧化锆催化剂 作为必需组分，通过使用二氧化碳作为被吸附物的温度程序解吸法测定的弱碱性位点量大于0.03mmol / g，其中二氧化碳在100℃至250℃的温度范围内脱附的量 测定C C，并且具有不小于0.1cc / g的量的半径为20至500的孔，并且半径为1,000至50,000的孔具有不小于0.05cc / g，用水银孔率计测量。 醛可以以高收率从脂族或脂环族羧酸或其衍生物直接得到。

公开(公告)号：US06555421B2

公开(公告)日：2003-04-29

申请号：US09758238

申请日：2001-01-12

申请人： Naoko Matsuyama ,  Sinya Sasaki

发明人： Naoko Matsuyama ,  Sinya Sasaki

IPC分类号： H01L2100

CPC分类号： C23C16/45502 ,  C23C16/0272 ,  C23C16/405 ,  C23C16/455 ,  H01L21/67017

摘要： A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially in parallel therewith to form thin films on the substrate surface. The film-forming process includes an initial film-forming step for forming a first thin film on the surface of the substrate 11 under a first film-forming conditions and a main film-forming step for forming, on the first thin film acting as a backing layer, a second thin film of a thickness greater than that of the first thin film under a second film-forming condition which differs from the first film-forming condition.

摘要翻译： 用于制造半导体器件的方法和装置可以在衬底上形成均匀厚度的薄膜。 该方法和装置包括一个成膜过程，其中成膜气体14,15基本上平行地流过基板11的表面，以在基板表面上形成薄膜。 成膜方法包括在第一成膜条件下在基板11的表面上形成第一薄膜的初始成膜步骤和用于在作为第一薄膜形成步骤的第一薄膜上形成的主成膜步骤 背衬层，其厚度大于第一薄膜形成条件下的第二薄膜，该第二薄膜形成条件与第一成膜条件不同。

公开(公告)号：US06204199B1

公开(公告)日：2001-03-20

申请号：US09393276

申请日：1999-09-10

申请人： Masanori Sakai ,  Masayuki Tsuneda ,  Naoko Matsuyama ,  Hideharu Itatani ,  Michihide Nakamure

发明人： Masanori Sakai ,  Masayuki Tsuneda ,  Naoko Matsuyama ,  Hideharu Itatani ,  Michihide Nakamure

IPC分类号： H01L2102

CPC分类号： C23C16/45502 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/31604 ,  H01L21/67017

摘要： A method and apparatus for producing a semiconductor device can provide a uniform film on a substrate. A substrate is introduced into a reaction chamber or tube (51) which has gas feed ports (52, 53) and gas exhaust ports (54, 55). The substrate in the reaction tube (51) is heated to substantially a film forming temperature while supplying a prescribed gas to the reaction tube (51) through the gas feed ports (52, 53) and exhausting the prescribed gas from the reaction tube (51) through all the exhaust ports (54, 55). A film-forming gas is supplied to the reaction tube (51) to form a film on the substrate. The substrate with the film formed thereon is taken out of the reaction tube (51). Moreover, after the film formation on the substrate, a prescribed gas is supplied to the reaction tube (51) from the gas feed ports (52, 53) while being exhausted from the reaction tube (51) through all the exhaust ports (54, 55), thereby removing a residual gas in the reaction tube.

摘要翻译： 用于制造半导体器件的方法和设备可以在衬底上提供均匀的膜。 将基板引入具有气体供给口（52,53）和排气口（54,55）的反应室或管（51）中。 反应管（51）中的基板通过气体供给口（52,53）向反应管（51）供给预定气体，并从反应管（51）排出规定的气体，将其加热至大致成膜温度 ）通过所有排气口（54,55）。 向反应管（51）供给成膜气体，在基板上形成膜。 将其上形成有膜的基板从反应管（51）中取出。 此外，在基板上形成膜之后，通过所有排气口（54,54）从反应管（51）排出，从气体供给口（52,53）向反应管51供给预定的气体， 55），从而除去反应管中的残留气体。