- 专利标题: Solid-state memory with magnetic storage cells
-
申请号: US09561317申请日: 2000-04-28
-
公开(公告)号: US06424565B1公开(公告)日: 2002-07-23
- 发明人: James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
- 申请人: James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
- 主分类号: G11C1114
- IPC分类号: G11C1114
摘要:
A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.
公开/授权文献
- US20020003721A1 Solid-state memory with magnetic storage cells 公开/授权日:2002-01-10
信息查询