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1.发明授权Method of fabricating an MRAM device including spin dependent tunneling junction memory cells 有权制造包括自旋相关隧道结存储器单元的MRAM器件的方法公开(公告)号：US06727105B1
公开(公告)日：2004-04-27
申请号：US09514934
申请日：2000-02-28
IPC分类号： H01L2100
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01L27/222 , H01L43/08
摘要： A spin dependent tunneling (“SDT”) junction of a memory cell for a Magnetic Random Access Memory (“MRAM”) device includes a pinned ferromagnetic layer, followed by an insulating tunnel barrier and a sense ferromagnetic layer. During fabrication of the MRAM device, after formation of the pinned layer but before formation of the insulating tunnel barrier, an exposed surface of the pinned layer is flattened. The exposed surface of the pinned layer may be flattened by an ion etching process.
摘要翻译： 用于磁随机存取存储器（“MRAM”）器件的存储器单元的自旋相关隧道（“SDT”）结包括钉扎铁磁层，随后是绝缘隧道势垒和感测铁磁层。 在制造MRAM器件期间，在形成钉扎层之后但在形成绝缘隧道势垒之前，被钉扎层的暴露表面变平。 被钉扎层的暴露表面可以通过离子蚀刻工艺变平。
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公开(公告)号：US06424565B1
公开(公告)日：2002-07-23
申请号：US09561317
申请日：2000-04-28
IPC分类号： G11C1114
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.
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公开(公告)号：US06169686A
公开(公告)日：2001-01-02
申请号：US08974925
申请日：1997-11-20
IPC分类号： G11C1114
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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公开(公告)号：US06607924B2
公开(公告)日：2003-08-19
申请号：US09871387
申请日：2001-05-31
IPC分类号： H01L2100
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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公开(公告)号：US5930087A
公开(公告)日：1999-07-27
申请号：US974420
申请日：1997-11-20
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/33 , G11B5/332 , G11B5/3903 , G11B5/3909 , G11B5/3919 , G11B5/40 , H01F10/3268 , G11B19/04 , G11B5/11 , G11B5/3912 , G11B5/3967
摘要： A robust recording head with a spin tunneling sensing element separated from an interface between the recording head and a recording media so as not to be affected by collisions and other ill effects at the interface between the recording head and the recording media. The spin tunneling sensing element includes a pair of magnetic elements wherein one of the magnetic elements functions as a flux guide that conducts magnetic flux emanating from the recording media away from the interface to an active area of the spin tunneling sensing element.
摘要翻译： 一种坚固的记录头，其具有与记录头和记录介质之间的接口分开的自旋隧道感测元件，以便不受记录头和记录介质之间的界面处的碰撞和其它不良影响的影响。 自旋隧道感测元件包括一对磁性元件，其中一个磁性元件用作将从记录介质发出的磁通远离界面移动到自旋隧道感应元件的有效区域的磁通引导件。
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公开(公告)号：US06608790B2
公开(公告)日：2003-08-19
申请号：US09998216
申请日：2001-12-03
IPC分类号： G11C704
CPC分类号： G11C11/16
摘要： A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.
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7.发明授权公开(公告)号：US06577549B1
公开(公告)日：2003-06-10
申请号：US10254559
申请日：2002-09-25
IPC分类号： G11C704
CPC分类号： G11C11/16
摘要： A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.
摘要翻译： 存储器件包括具有衬底的存储器阵列，设置在衬底上的存储器单元阵列，耦合到存储器单元的行导体和耦合到存储器单元的列导体。 存储器件还包括响应于存储器阵列中的温度变化产生可变写入电流的电流源。 随着阵列温度的变化，产生可变写入电流以适应存储器单元的矫顽力变化。 电流源可以包括温度传感器，其向电流传感器提供连续的即时输出，以确保精确地调整由电流源产生的写入电流。 不需要停止存储器件的操作来校准电流源。 此外，电流源提供对写入电流的精确调整，因为温度传感器用于产生输出的温度可以同时产生写入电流。
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8.发明授权Magneto-resistive device including soft reference layer having embedded conductors 有权磁阻器件包括具有嵌入导体的软参考层公开(公告)号：US06504221B1
公开(公告)日：2003-01-07
申请号：US09963932
申请日：2001-09-25
IPC分类号： G11C1115
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/222
摘要： A magnetic memory device includes a data ferromagnetic layer having a magnetization that can be oriented in either of two directions, a reference layer, and a spacer layer between the data and reference layers. The reference layer includes a dielectric layer, first and second conductors separated by the dielectric layer, and a ferromagnetic cladding on the first and second conductors. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.
摘要翻译： 磁存储器件包括具有可以在两个方向中的任一个方向上定向的磁化的数据铁磁层，参考层和数据和参考层之间的间隔层。 参考层包括电介质层，由电介质层分开的第一和第二导体以及第一和第二导体上的铁磁包层。 可以通过将参考层的磁化临时设置为已知取向来读取存储器件，并且确定器件的电阻状态。
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公开(公告)号：US06791874B2
公开(公告)日：2004-09-14
申请号：US10753298
申请日：2004-01-08
IPC分类号： G11C1100
CPC分类号： G11C29/028 , G11C11/15 , G11C11/16 , G11C29/50 , G11C2029/5002 , G11C2029/5006
摘要： A memory device having a cross point array of memory cells includes a temperature sensor and a reference memory cell. The temperature sensor senses the temperature of the memory device and data from the temperature sensor and the reference memory cell are used to update write currents used to program the array of memory cells. A method of calibrating the memory device involves detecting a temperature of the memory device, determining whether the temperature of the memory device has changed by a threshold value, and updating write current values if the temperature of the memory device changes by the threshold value. The write current values can be updated by data from the reference memory cell, or from write current values stored in a lookup table.
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公开(公告)号：US06791865B2
公开(公告)日：2004-09-14
申请号：US10232363
申请日：2002-09-03
IPC分类号： G11C1100
CPC分类号： G11C29/028 , G11C11/15 , G11C11/16 , G11C29/50 , G11C2029/5002 , G11C2029/5006
摘要： A memory device having a cross point array of memory cells includes a temperature sensor and a reference memory cell. The temperature sensor senses the temperature of the memory device and data from the temperature sensor and the reference memory cell are used to update write currents used to program the array of memory cells. A method of calibrating the memory device involves detecting a temperature of the memory device, determining whether the temperature of the memory device has changed by a threshold value, and updating write current values if the temperature of the memory device changes by the threshold value. The write current values can be updated by data from the reference memory cell, or from write current values stored in a lookup table.
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