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1.发明授权Method of fabricating an MRAM device including spin dependent tunneling junction memory cells 有权制造包括自旋相关隧道结存储器单元的MRAM器件的方法公开(公告)号：US06727105B1
公开(公告)日：2004-04-27
申请号：US09514934
申请日：2000-02-28
IPC分类号： H01L2100
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01L27/222 , H01L43/08
摘要： A spin dependent tunneling (“SDT”) junction of a memory cell for a Magnetic Random Access Memory (“MRAM”) device includes a pinned ferromagnetic layer, followed by an insulating tunnel barrier and a sense ferromagnetic layer. During fabrication of the MRAM device, after formation of the pinned layer but before formation of the insulating tunnel barrier, an exposed surface of the pinned layer is flattened. The exposed surface of the pinned layer may be flattened by an ion etching process.
摘要翻译： 用于磁随机存取存储器（“MRAM”）器件的存储器单元的自旋相关隧道（“SDT”）结包括钉扎铁磁层，随后是绝缘隧道势垒和感测铁磁层。 在制造MRAM器件期间，在形成钉扎层之后但在形成绝缘隧道势垒之前，被钉扎层的暴露表面变平。 被钉扎层的暴露表面可以通过离子蚀刻工艺变平。
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公开(公告)号：US06607924B2
公开(公告)日：2003-08-19
申请号：US09871387
申请日：2001-05-31
IPC分类号： H01L2100
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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公开(公告)号：US06424565B1
公开(公告)日：2002-07-23
申请号：US09561317
申请日：2000-04-28
IPC分类号： G11C1114
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.
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公开(公告)号：US06169686A
公开(公告)日：2001-01-02
申请号：US08974925
申请日：1997-11-20
IPC分类号： G11C1114
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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公开(公告)号：US5930087A
公开(公告)日：1999-07-27
申请号：US974420
申请日：1997-11-20
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/33 , G11B5/332 , G11B5/3903 , G11B5/3909 , G11B5/3919 , G11B5/40 , H01F10/3268 , G11B19/04 , G11B5/11 , G11B5/3912 , G11B5/3967
摘要： A robust recording head with a spin tunneling sensing element separated from an interface between the recording head and a recording media so as not to be affected by collisions and other ill effects at the interface between the recording head and the recording media. The spin tunneling sensing element includes a pair of magnetic elements wherein one of the magnetic elements functions as a flux guide that conducts magnetic flux emanating from the recording media away from the interface to an active area of the spin tunneling sensing element.
摘要翻译： 一种坚固的记录头，其具有与记录头和记录介质之间的接口分开的自旋隧道感测元件，以便不受记录头和记录介质之间的界面处的碰撞和其它不良影响的影响。 自旋隧道感测元件包括一对磁性元件，其中一个磁性元件用作将从记录介质发出的磁通远离界面移动到自旋隧道感应元件的有效区域的磁通引导件。
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6.发明授权MRAM device using magnetic field bias to suppress inadvertent switching of half-selected memory cells 有权MRAM器件使用磁场偏置来抑制半选择存储单元的无意切换
公开(公告)号：US6097626A
公开(公告)日：2000-08-01
申请号：US363082
申请日：1999-07-28
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： In a Magnetic Random Access Memory device, a magnetic field bias is applied to half-selected memory cells during a write operation. The magnetic field bias suppresses the inadvertent switching of the half-selected memory cells.
摘要翻译： 在磁随机存取存储器件中，在写入操作期间将磁场偏置施加到半选择的存储器单元。 磁场偏置抑制了半选择的存储单元的意外切换。
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公开(公告)号：US6134139A
公开(公告)日：2000-10-17
申请号：US363081
申请日：1999-07-28
IPC分类号： H01L27/105 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L43/08 , G11C11/14
CPC分类号： G11C11/16
摘要： A magnetic memory with enhanced half-select margin includes an array of magnetic memory cells each having a data storage layer with an easy axis and an array of conductors each having an angle of orientation with respect to the easy axes that is preselected to enhance half-select margin in the magnetic memory. The angle of orientation is such that the longitudinal write field is enhanced and the perpendicular write field is minimized in a selected memory cell. The magnetic memory cells optionally includes a structured data storage layer including a control layer that minimizes the likelihood of half-select switching in the unselected magnetic memory cells.
摘要翻译： 具有增强的半选择余量的磁存储器包括磁存储单元的阵列，每个磁存储单元具有易于轴的数据存储层和导体阵列，每个导体阵列相对于容易的轴具有取向角， 在磁存储器中选择余量。 取向角使得纵向写入场增强，并且垂直写入场在选定的存储单元中最小化。 磁存储单元可选地包括结构化数据存储层，其包括使未选择的磁存储单元中的半选择切换的可能性最小化的控制层。
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8.发明授权Magnetic memory cell with off-axis reference layer orientation for improved response 有权具有离轴参考层取向的磁记忆体，以改善响应
公开(公告)号：US5982660A
公开(公告)日：1999-11-09
申请号：US140992
申请日：1998-08-27
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/22
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/222 , H01L43/08
摘要： A magnetic memory cell including a data storage layer having an easy axis and a reference layer having an orientation of magnetization which is pinned in a direction that is off-axis with respect to the easy axis. This structure increases the signal obtainable during read operation on the magnetic memory cell notwithstanding the effects of magnetizations in the edge domains of the data storage layer. In addition, this structure allows high MRAM densities to be achieved using square-shaped memory cell structures.
摘要翻译： 一种磁存储单元，包括具有容易轴的数据存储层和具有相对于容易轴在离轴方向上固定的磁化取向的参考层。 尽管在数据存储层的边缘域中存在磁化的影响，但是这种结构增加了在磁存储器单元的读取操作期间可获得的信号。 此外，该结构允许使用正方形形状的存储单元结构实现高MRAM密度。
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9.发明授权MRAM device including write circuit for supplying word and bit line current having unequal magnitudes 有权MRAM器件包括用于提供具有不等量幅度的字和位线电流的写电路
公开(公告)号：US6111783A
公开(公告)日：2000-08-29
申请号：US334485
申请日：1999-06-16
申请人： Lung T. Tran , James A. Brug
发明人： Lung T. Tran , James A. Brug
CPC分类号： G11C11/15
摘要： Data is written to a memory cell of a Magnetic Random Access Memory ("MRAM") device by supplying currents having substantially unequal magnitudes to word and bit lines crossing that memory cell. The substantially higher magnitude current may be supplied to the word lines.
摘要翻译： 通过向与该存储单元相交的字和位线提供具有基本上不相等幅度的电流将数据写入磁随机存取存储器（“MRAM”）器件的存储单元。 可以将大幅度更大的电流提供给字线。
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10.发明授权Stabilization of magnetoresistive sensors using the longitudinal field produced by the current in the contact leads 失效使用由接触引线中的电流产生的纵向磁场来稳定磁阻传感器
公开(公告)号：US5216560A
公开(公告)日：1993-06-01
申请号：US762244
申请日：1991-09-19
申请人： James A. Brug , Thomas C. Anthony
发明人： James A. Brug , Thomas C. Anthony
CPC分类号： G11B5/3903 , G01R33/09 , G01R33/096 , G11B5/3954
摘要： A magnetoresistive sensor having a longitudinal field that is produced along its axis and that stabilizes the sensor. The longitudinal field is produced by the current in conductors that are connected to the magnetoresistive sensor elements. By controlling the direction and distribution of the current in the conductors, a longitudinal field is produced that has the required direction and magnitude to stabilize the single domain state of the sensor. The resulting lack of domain wall motion in the sensor during operation prevents instabilities in its electrical output, commonly known as Barkhausen noise. Four different sensor designs are provided that include two single element sensors with two conductors, a dual element sensor with four conductors, and a dual element sensor with three conductors. The ease of implementation makes the stabilized sensor of the present invention superior to conventional approaches that rely on permanent magnets or exchange coupled layers to provide longitudinal bias.
摘要翻译： 磁阻传感器具有沿其轴线产生并使传感器稳定的纵向场。 纵向场由连接到磁阻传感器元件的导体中的电流产生。 通过控制导体中电流的方向和分布，产生具有所需方向和幅度以稳定传感器的单畴状态的纵向场。 传感器在操作过程中由于缺少畴壁运动，可防止其电气输出不稳定，通常称为巴克豪森噪声。 提供了四种不同的传感器设计，其中包括两个单元件传感器，两个导体，一个双元件传感器，四个导体和一个双元件传感器，三个导体。 实现的便利性使得本发明的稳定的传感器优于依靠永磁体或交换耦合层提供纵向偏压的常规方法。
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