发明授权
- 专利标题： Group III nitride compound semiconductor device
- 专利标题（中）： III族氮化物化合物半导体器件
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申请号： US09518724申请日： 2000-03-03
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公开(公告)号： US06426512B1公开(公告)日： 2002-07-30
- 发明人: Jun Ito , Toshiaki Chiyo , Naoki Shibata , Hiroshi Watanabe , Shizuyo Asami , Shinya Asami
- 申请人： Jun Ito , Toshiaki Chiyo , Naoki Shibata , Hiroshi Watanabe , Shizuyo Asami , Shinya Asami
- 优先权： JP11-058128 19990305; JP11-060206 19990308; JP11-061155 19990309; JP11-090833 19990331; JP11-235450 19990823
- 主分类号： H01L2906
- IPC分类号： H01L2906
摘要：
An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.