Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

发明授权

US06441391B1 Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate 有权

标题翻译：具有漏极和栅电极的半导体器件形成为相对于衬底沿着几个方向的位置

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专利标题： Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate
专利标题（中）： 具有漏极和栅电极的半导体器件形成为相对于衬底沿着几个方向的位置
申请号： US09940374

申请日： 2001-08-29
公开(公告)号： US06441391B1

公开(公告)日： 2002-08-27
发明人: Yasuo Ohno , Nobuyuki Hayama , Kensuke Kasahara , Tatsuo Nakayama , Hironobu Miyamoto , Yuji Takahashi , Yuji Ando , Kohji Matsunaga , Masaaki Kuzuhara
申请人： Yasuo Ohno , Nobuyuki Hayama , Kensuke Kasahara , Tatsuo Nakayama , Hironobu Miyamoto , Yuji Takahashi , Yuji Ando , Kohji Matsunaga , Masaaki Kuzuhara
优先权： JP2000-265783 20000901
主分类号： H01L2906
IPC分类号： H01L2906

Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

摘要：

An object of the present invention is to improve, in a group III nitride semiconductor device, the productivity, heat radiation characteristic and performance in the element high speed operation; upon a sapphire substrate in which an A plane (an (11-20) plane) is set to be the basal plane, an epitaxial growth layer of a group III nitride semiconductor is formed and, thereon, a gate electrode 16, a source electrode 15 and a drain electrode 17 are formed; these electrodes are disposed in such a way that a direction along which they are laid makes an angle within 20° with respect to a C axis of sapphire.

摘要（中）：

本发明的目的是在III族氮化物半导体器件中提高元件高速运转中的生产率，散热特性和性能; 在其中A平面（（11-20）面）设置为基面的蓝宝石衬底上，形成III族氮化物半导体的外延生长层，并且在其上形成栅电极16，源电极 15和漏电极17; 这些电极被设置成使得它们被放置的方向相对于蓝宝石的C轴成20°以内的角度。

公开/授权文献

US20020047113A1 Semiconductor device 公开/授权日：2002-04-25

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