发明授权
- 专利标题: Laser-irradiation method and laser-irradiation device
- 专利标题(中): 激光照射方法和激光照射装置
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申请号: US09298517申请日: 1999-04-22
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公开(公告)号: US06455359B1公开(公告)日: 2002-09-24
- 发明人: Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
- 申请人: Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.