发明授权
US06456010B2 Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
有权
放电等离子体产生方法，放电等离子体产生装置，半导体器件制造方法和半导体器件制造装置
- 专利标题： Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
- 专利标题（中）： 放电等离子体产生方法，放电等离子体产生装置，半导体器件制造方法和半导体器件制造装置
-
申请号： US09756651申请日： 2001-01-10
-
公开(公告)号： US06456010B2公开(公告)日： 2002-09-24
- 发明人: Hideo Yamakoshi , Koji Satake , Yoshiaki Takeuchi , Hiroshi Mashima , Tatsufumi Aoi , Masayoshi Murata
- 申请人： Hideo Yamakoshi , Koji Satake , Yoshiaki Takeuchi , Hiroshi Mashima , Tatsufumi Aoi , Masayoshi Murata
- 优先权： JP2000-069044 20000313; JP2000-085281 20000324
- 主分类号： H01J724
- IPC分类号： H01J724
摘要：
A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.