Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
    1.
    发明授权
    Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus 有权
    放电等离子体产生方法,放电等离子体产生装置,半导体器件制造方法和半导体器件制造装置

    公开(公告)号:US06456010B2

    公开(公告)日:2002-09-24

    申请号:US09756651

    申请日:2001-01-10

    IPC分类号: H01J724

    摘要: A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.

    摘要翻译: 放电等离子体产生方法包括:(a)将具有基本上平面的放电部分的放电电极与真空反应容器中的待处理基板相对,使得放电电极和基板彼此基本平行;(b)将 将真空反应容器供给到放电电极和基板之间的空间,并且(c)向放电电极施加HF功率,使得表示在分离的放电电极上的HF电压phi的空间分布的外壳 根据包括时间的功能作为参数进行第二变化,从而在放电电极和基板之间产生处理气体的放电等离子体,基本上不会在放电电极上产生HF电压phi的驻波。

    Photoelectric conversion device
    4.
    发明申请
    Photoelectric conversion device 审中-公开
    光电转换装置

    公开(公告)号:US20060090790A1

    公开(公告)日:2006-05-04

    申请号:US11053667

    申请日:2005-02-09

    IPC分类号: H01L31/00 H01L21/00

    摘要: A photoelectric conversion device is composed of a substrate, a lower electrode layer formed to cover the substrate, and a first semiconductor layer formed on the lower electrode. The lower electrode layer includes a first matrix formed of transparent conductive material, and light scattering granules embedded within the first matrix.

    摘要翻译: 光电转换装置由基板,形成为覆盖基板的下电极层和形成在下电极上的第一半导体层构成。 下电极层包括由透明导电材料形成的第一矩阵和嵌入在第一基体内的光散射颗粒。

    Light-scattering film and optical device using the same
    10.
    发明申请
    Light-scattering film and optical device using the same 失效
    光散射膜和使用其的光学装置

    公开(公告)号:US20060137735A1

    公开(公告)日:2006-06-29

    申请号:US11296706

    申请日:2005-12-08

    IPC分类号: H01L31/00

    摘要: A light scattering film having the structure which guides electrical signal to a desired position and scatters incident light and the surface of which is substantially flat, and a photoelectric device using the same. The light scattering film includes a medium made of transparent conductive material and a light scatterer embedded in the medium. The light scattering film realizes conductivity and the light-scattering characteristic by single component. It is not necessary to make the texture of a surface with concavity and convexity deliberately to achieve the light-scattering characteristic. Desirably, the surface is substantially flat. When a semiconductor layer is formed on the surface, the defects are suppressed because of the flatness of the surface. The photoelectric device having the light scattering film and the semiconductor device on the surface of the film can achieve high photoelectric conversion efficiency.

    摘要翻译: 具有将电信号引导到所需位置并散射入射光并且其表面基本平坦的结构的光散射膜和使用该光散射膜的光电装置。 光散射膜包括由透明导电材料制成的介质和嵌入介质中的光散射体。 光散射膜通过单一成分实现导电性和光散射特性。 不必有意地使具有凹凸的表面的纹理实现光散射特性。 理想地,表面基本上是平的。 当在表面上形成半导体层时,由于表面的平坦度,缺陷被抑制。 具有光散射膜的光电器件和膜表面上的半导体器件可实现高的光电转换效率。