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    Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
    1.
    发明授权
    Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus 有权
    放电等离子体产生方法，放电等离子体产生装置，半导体器件制造方法和半导体器件制造装置

    公开(公告)号：US06456010B2

    公开(公告)日：2002-09-24

    申请号：US09756651

    申请日：2001-01-10

    申请人： Hideo Yamakoshi ,  Koji Satake ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Tatsufumi Aoi ,  Masayoshi Murata

    发明人： Hideo Yamakoshi ,  Koji Satake ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Tatsufumi Aoi ,  Masayoshi Murata

    IPC分类号： H01J724

    CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32165

    摘要： A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.

    摘要翻译： 放电等离子体产生方法包括：（a）将具有基本上平面的放电部分的放电电极与真空反应容器中的待处理基板相对，使得放电电极和基板彼此基本平行;（b）将 将真空反应容器供给到放电电极和基板之间的空间，并且（c）向放电电极施加HF功率，使得表示在分离的放电电极上的HF电压phi的空间分布的外壳 根据包括时间的功能作为参数进行第二变化，从而在放电电极和基板之间产生处理气体的放电等离子体，基本上不会在放电电极上产生HF电压phi的驻波。

    Plasma chemical vapor deposition apparatus
    4.
    发明授权
    Plasma chemical vapor deposition apparatus 有权
    等离子体化学气相沉积装置

    公开(公告)号：US06363881B2

    公开(公告)日：2002-04-02

    申请号：US09232600

    申请日：1999-01-19

    申请人： Masayoshi Murata ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Akemi Takano ,  Hirohisa Yoshida

    发明人： Masayoshi Murata ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Akemi Takano ,  Hirohisa Yoshida

    IPC分类号： C23C16509

    CPC分类号： H01J37/32082 ,  H01J37/32541

    摘要： Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.

    摘要翻译： 公开了一种等离子体化学气相沉积设备，用于通过利用由电源供应的电力产生的辉光放电来在目标衬底的表面上形成非晶薄膜，微晶薄膜或多晶薄膜，其包括反应 容器，用于将反应气体供给到反应容器中的装置，用于将反应气体的废气排出反应容器的排出装置，设置在反应容器内的用于排放产生的梯形电极， 用于辉光放电产生的梯形电极的高频功率为30MHz至200MHz，用于加热和支撑目标衬底的加热器，加热器与反应容器内平行于梯形电极放电产生 以及用于均匀地将高频电力分配到梯形电极用于放电发生的功率分配器 h电源线。

    Plasma CVD apparatus including rotating magnetic field generation means
    6.
    发明授权
    Plasma CVD apparatus including rotating magnetic field generation means 失效
    等离子CVD装置，包括旋转磁场产生装置

    公开(公告)号：US5423915A

    公开(公告)日：1995-06-13

    申请号：US127377

    申请日：1993-09-28

    申请人： Masayoshi Murata ,  Yoshiaki Takeuchi

    发明人： Masayoshi Murata ,  Yoshiaki Takeuchi

    IPC分类号： C23C16/24 ,  C23C16/509 ,  H01J37/32 ,  C23C16/50

    CPC分类号： H01J37/32082 ,  C23C16/24 ,  C23C16/5096 ,  H01J37/32623 ,  H01J37/3266 ,  H01J2237/3325 ,  H01J2237/3326

    摘要： This invention provides a plasma CVD method aimed at forming an amorphous silicon thin film on a large-area substrate at a high speed and also an apparatus therefor. The method and apparatus are characterized by a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes accommodated in the reaction vessel, a source for supplying power for glow discharge to the discharging electrodes, two pairs of solenoid coils arranged on opposite sides of said reaction vessel and so disposed that the axes thereof perpendicularly intersect each other as well as perpendicularly the electric field formed between the discharging electrodes, and an AC source for supplying power to said solenoid coils for magnetic field generation, whereby an amorphous silicon thin film is formed on a substrate held to intersect perpendicularly the electric field between the discharging electrodes.

    摘要翻译： 本发明提供了一种旨在高速地在大面积基板上形成非晶硅薄膜的等离子体CVD方法及其装置。 该方法和装置的特征在于反应容器，用于将反应气体送入反应容器并将其排出的装置，将容纳在反应容器中的电极放电，向放电电极供给辉光放电的电源， 电磁线圈布置在所述反应容器的相对侧上并且被布置成使得其轴线垂直地彼此垂直地相交，并且垂直地形成在放电电极之间的电场;以及AC电源，用于向所述螺线管线圈供电用于产生磁场， 由此在保持垂直于放电电极之间的电场的基板上形成非晶硅薄膜。

    Pulse generator for treating exhaust gas
    8.
    发明授权
    Pulse generator for treating exhaust gas 失效
    用于处理废气的脉冲发生器

    公开(公告)号：US06344701B1

    公开(公告)日：2002-02-05

    申请号：US09369842

    申请日：1999-08-09

    申请人： Keisuke Kawamura ,  Tetsuro Shigemizu ,  Hirohisa Yoshida ,  Masayoshi Murata

    发明人： Keisuke Kawamura ,  Tetsuro Shigemizu ,  Hirohisa Yoshida ,  Masayoshi Murata

    IPC分类号： H03K302

    CPC分类号： F01N3/0892 ,  B01D53/32 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0807 ,  B01J2219/0875 ,  B01J2219/0894

    摘要： An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R1, R2, . . . Rn) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V1, V2, . . . and Vn) are connected to the reactor chambers (R1, R2, . . . and Rn), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C. charger (V0), is simultaneously applied to a plurality of distributed constant lines (or transmission lines) (1−1, 1−2, 2−1, 2−2, . . . , N−1 and N−2), which are connected in parallel with one another, by means of a signal shortcircuit switch (S1).

    摘要翻译： 一种处理废气的设备和方法。 在这种装置中，多个反应室（R1，R2，...，Rn）在废气流的方向上串联连接。 此外，高压电源（V1，V2，...和Vn）分别连接到电抗器室（R1，R2，...和Rn）。 此外，在这些反应器室的每一个中，产生流光放电器等离子体。 此外，放置阶段的反应室的下游越下游，要投入反应器室的较低能量变为。 在气体分解单元中产生的电子的密度在排气流的上游侧的部分高，并且其下游侧的部分的电子密度低。 另外，本发明还提供一种脉冲发生器，其中作为直流充电器（V0）的输出电压的高电压同时施加到多个分布常数线路（或传输线路）（1-1,1） -2,2-1,2-2，...，N-1和N-2），它们通过信号短路开关（S1）彼此并联连接。

    Endothelin antagonists
    9.
    发明授权
    Endothelin antagonists 失效
    内皮素拮抗剂

    公开(公告)号：US06207686B1

    公开(公告)日：2001-03-27

    申请号：US08836198

    申请日：1997-06-20

    申请人： Masahiro Neya ,  Tatsuya Zenkoh ,  Hitoshi Sawada ,  Chiyoshi Kasahara ,  Masayoshi Murata ,  Keiji Hemmi

    发明人： Masahiro Neya ,  Tatsuya Zenkoh ,  Hitoshi Sawada ,  Chiyoshi Kasahara ,  Masayoshi Murata ,  Keiji Hemmi

    IPC分类号： A61K3138

    CPC分类号： C07D405/12 ,  C07D209/20 ,  C07D317/60 ,  C07D409/12

    摘要： A compound of formula (I), in which: R1 is lower alkyl, cyclo(lower)alkyl, optionally substituted aryl, optionally substituted heterocyclic group, cyclo(lower)alkyl(lower)alkyl, or ar(lower)alkyl; R2 is hydrogen, hydroxy or protected hydroxy; R3 is lower alkyl, aryl, ar(lower)alkyl or optionally substituted heterocyclic(lower)alkyl; R4 is carboxy, protected carboxy or lower alkylsufonylcarbamoyl; R5 is hydrogen or lower alkyl; R6 is hydrogen or heterocyclic group; A is a single bond or lower alkylene, and Ar is optionally substituted aryl, or pharmaceutically acceptable salts thereof, having endothelin antagonistic activity.

    摘要翻译： 式（I）化合物，其中：R 1为低级烷基，环（低级）烷基，任选取代的芳基，任选取代的杂环基，环（低级）烷基（低级）烷基或芳（低级）烷基; R2是氢，羟基或被保护的羟基; R3是低级烷基，芳基，芳（低级）烷基或任选取代的杂环（低级）烷基; R4是羧基，被保护的羧基或低级烷基磺酰基氨基甲酰基; R5是氢或低级烷基; R6是氢或杂环基; A是单键或低级亚烷基，Ar是具有内皮素拮抗活性的任选取代的芳基或其药学上可接受的盐。