发明授权
- 专利标题： Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector
- 专利标题（中）： 具有改进布置以避免钨互连器断裂的半导体器件
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申请号： US09822489申请日： 2001-04-02
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公开(公告)号： US06472754B2公开(公告)日： 2002-10-29
- 发明人: Takashi Nakajima , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shinji Nishihara , Masashi Sahara , Kentaro Yamada , Masayuki Suzuki
- 申请人： Takashi Nakajima , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shinji Nishihara , Masashi Sahara , Kentaro Yamada , Masayuki Suzuki
- 优先权： JP2000-101195 20000331
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another molybdenum film are deposited in this order on an interlayer dielectric film formed on a silicon substrate.
公开/授权文献
- US20020024140A1 Semiconductor device 公开/授权日：2002-02-28
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