公开(公告)号：US06617691B2

公开(公告)日：2003-09-09

申请号：US10252534

申请日：2002-09-24

申请人： Takashi Nakajima ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara ,  Kentaro Yamada ,  Masayuki Suzuki

发明人： Takashi Nakajima ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara ,  Kentaro Yamada ,  Masayuki Suzuki

IPC分类号： H01L2348

CPC分类号： H01L23/485 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another molybdenum film are deposited in this order on an interlayer dielectric film formed on a silicon substrate.

公开(公告)号：US06472754B2

公开(公告)日：2002-10-29

申请号：US09822489

申请日：2001-04-02

申请人： Takashi Nakajima ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara ,  Kentaro Yamada ,  Masayuki Suzuki

发明人： Takashi Nakajima ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara ,  Kentaro Yamada ,  Masayuki Suzuki

IPC分类号： H01L2348

CPC分类号： H01L23/485 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another molybdenum film are deposited in this order on an interlayer dielectric film formed on a silicon substrate.

摘要翻译： 本发明的目的是提供这样一种高度可靠的半导体器件，不会出现诸如钨导体断裂的缺陷。 该目的通过以下方式实现，即，将钼膜，钨膜和另一种钼膜依次沉积在形成在硅衬底上的层间电介质膜上。

公开(公告)号：US06856021B1

公开(公告)日：2005-02-15

申请号：US09648455

申请日：2000-08-28

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/7685 ,  H01L23/53219 ,  H01L23/53223 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided which includes a semiconductor substrate, metal conductors formed on a side of a main face of the substrate, which metal conductors contain aluminum as a main constituent thereof, and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.

摘要翻译： 提供了一种半导体器件，其包括半导体衬底，形成在衬底的主面一侧的金属导体，该金属导体以铝为主要成分，铜作为添加元素，金属导体被制成含有 抑制铜的析出或使金属导体附近具有这样的膜的元素，以抑制铜的沉淀，或者使该膜与金属导体相邻，以抑制铜的析出 。

公开(公告)号：US06476492B2

公开(公告)日：2002-11-05

申请号：US09758288

申请日：2001-01-12

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L2348

CPC分类号： H01L23/53257 ,  H01L27/10814 ,  H01L27/10894 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.

摘要翻译： 在包括第一电极的电容器组件，具有高介电常数或与第一电极接触的铁电性的氧化膜和与该氧化物膜接触的第二电极的电容器组件中， 在其上形成有金属布线层的硅衬底的主面上，通过使用含钼钨作为材料，可以解决半导体器件的钨互连断裂，可靠性降低，成品率降低等问题 金属互连层。

公开(公告)号：US06784549B2

公开(公告)日：2004-08-31

申请号：US10395248

申请日：2003-03-25

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L2348

CPC分类号： H01L23/53257 ,  H01L27/10814 ,  H01L27/10894 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.

摘要翻译： 在包括第一电极的电容器组件，具有高介电常数或与第一电极接触的铁电性的氧化膜和与该氧化物膜接触的第二电极的电容器组件中， 在其上形成有金属布线层的硅衬底的主面上，通过使用含钼钨作为材料，可以解决半导体器件的钨互连断裂，可靠性降低，成品率降低等问题 金属互连层。

公开(公告)号：US06548904B2

公开(公告)日：2003-04-15

申请号：US10252685

申请日：2002-09-24

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L2348

CPC分类号： H01L23/53257 ,  H01L27/10814 ,  H01L27/10894 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.

摘要翻译： 在包括第一电极的电容器组件，具有高介电常数或与第一电极接触的铁电性的氧化膜和与该氧化物膜接触的第二电极的电容器组件中， 在其上形成有金属布线层的硅衬底的主面上，通过使用含钼钨作为材料，可以解决半导体器件的钨互连断裂，可靠性降低，成品率降低等问题 金属互连层。

公开(公告)号：US07064437B2

公开(公告)日：2006-06-20

申请号：US10184932

申请日：2002-07-01

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L23/48 ,  H01L29/94

CPC分类号： H01L21/76844 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/7685 ,  H01L23/53219 ,  H01L23/53223 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor device having high reliability, high yield, and such a interconnection structure as short hardly occurs. The semiconductor device comprises a semiconductor substrate, metal conductors formed on a side of a main face of the substrate which metal conductors contain aluminum as main constituent thereof and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.

公开(公告)号：US06960832B2

公开(公告)日：2005-11-01

申请号：US10761333

申请日：2004-01-22

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L23/12 ,  H01L21/00

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76877

摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.

摘要翻译： 在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

公开(公告)号：US07084477B2

公开(公告)日：2006-08-01

申请号：US10600771

申请日：2003-06-23

申请人： Norio Ishitsuka ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Masahito Takahashi ,  Norio Suzuki ,  Shuji Ikeda ,  Hideki Tanaka ,  Hiroyuki Mima

发明人： Norio Ishitsuka ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Masahito Takahashi ,  Norio Suzuki ,  Shuji Ikeda ,  Hideki Tanaka ,  Hiroyuki Mima

IPC分类号： H01L29/00

CPC分类号： H01L27/11526 ,  H01L21/28123 ,  H01L21/76224 ,  H01L21/823481 ,  H01L27/105 ,  H01L27/11546

摘要： To suppress defects occurred in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.

摘要翻译： 为了抑制在半导体衬底中发生的缺陷，半导体器件通过具有：半导体衬底; 具有形成在所述半导体衬底中的沟槽的元件隔离区域和嵌入所述沟槽中的嵌入绝缘膜; 形成在元件隔离区域附近形成的有源区，其中形成栅极绝缘膜并在栅极绝缘膜上形成栅电极; 以及形成为使得栅电极的至少一部分位于元件隔离区域上的区域，以及在栅电极为第一元件隔离区域的嵌入绝缘膜的上侧的第一边缘表面 定位在位于绝缘膜的第二边缘表面上方的第二元件隔离区域中，栅极电极膜未被定位。

公开(公告)号：US06943076B2

公开(公告)日：2005-09-13

申请号：US09943843

申请日：2001-08-30

申请人： Tomio Iwasaki ,  Hideo Miura ,  Hiroyuki Ohta ,  Hiroshi Moriya

发明人： Tomio Iwasaki ,  Hideo Miura ,  Hiroyuki Ohta ,  Hiroshi Moriya

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/517 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L27/10814 ,  H01L27/10873 ,  H01L27/10882 ,  H01L29/4966 ,  H01L29/513

摘要： Gate insulation films each containing titanium oxide as a primary constituent material are formed on one major surface of a semiconductor substrate. Gate electrode films are formed in contact with the gate insulation films. The gate electrode films contain ruthenium oxide or alternatively iridium oxide as a primary constituent material. In order to prevent electrically conductive elements from diffusing into titanium oxide of the gate insulation films, ruthenium oxide or iridium oxide is effectively used as a primary constituent material of the gate electrodes. A semiconductor device can be realized in which occurrence of a leak current is suppressed by increasing a physical film thickness while sustaining desired dielectric characteristic.

摘要翻译： 在半导体衬底的一个主表面上形成各自含有氧化钛作为主要构成材料的栅极绝缘膜。 形成与栅极绝缘膜接触的栅极电极膜。 栅极电极膜含有氧化钌或氧化铱作为主要构成材料。 为了防止导电元件扩散到栅极绝缘膜的氧化钛中，氧化钌或氧化铱被有效地用作栅电极的主要构成材料。 可以实现半导体器件，其中通过在保持期望的介电特性的同时增加物理膜厚度来抑制泄漏电流的发生。