发明授权
- 专利标题: Semiconductor device manufacturing method
- 专利标题(中): 半导体器件制造方法
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申请号: US09396732申请日: 1999-09-15
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公开(公告)号: US06479305B2公开(公告)日: 2002-11-12
- 发明人: Ryuji Kono , Akihiko Ariga , Hideyuki Aoki , Hiroyuki Ohta , Yoshishige Endo , Masatoshi Kanamaru , Atsushi Hosogane , Shinji Tanaka , Naoto Ban , Hideo Miura
- 申请人: Ryuji Kono , Akihiko Ariga , Hideyuki Aoki , Hiroyuki Ohta , Yoshishige Endo , Masatoshi Kanamaru , Atsushi Hosogane , Shinji Tanaka , Naoto Ban , Hideo Miura
- 优先权: JP10-264413 19980918
- 主分类号: H01L2166
- IPC分类号: H01L2166
摘要:
Semiconductor device chips manufacturing and inspecting method is disclosed in which a semiconductor wafer is cut into individual LSI chips. The LSI chips are rearranged and integrated into a predetermined number. The cut LSI chips are integrated in a jig having openings with a size commensurate with the dimensions of the LSI chip. At least one part of the jig having such openings has a coefficient of thermal expansion that is approximately equal to that of the LSI chips. The integrated predetermined number of chips are subjected to an inspection process in a subsequent inspection step thereby improving efficiency and reducing cost.
公开/授权文献
- US20020064893A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 公开/授权日:2002-05-30
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