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    CONNECTION DEVICE AND TEST SYSTEM
    2.
    发明申请
    CONNECTION DEVICE AND TEST SYSTEM 审中-公开
    连接装置和测试系统

    公开(公告)号：US20090209053A1

    公开(公告)日：2009-08-20

    申请号：US12408000

    申请日：2009-03-20

    申请人： Susumu KASUKABE ,  Terutaka Mori ,  Akihiko Ariga ,  Hidetaka Shigi ,  Takayoshi Watanabe ,  Ryuji Kono

    发明人： Susumu KASUKABE ,  Terutaka Mori ,  Akihiko Ariga ,  Hidetaka Shigi ,  Takayoshi Watanabe ,  Ryuji Kono

    IPC分类号： H01L21/66

    CPC分类号： G01R31/2889 ,  G01R1/06744 ,  G01R1/06772 ,  G01R1/0735 ,  G01R3/00 ,  G01R31/2863

    摘要： To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multilayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multilayer film. A clamping member is provided on the frame to make the multilayer film project out to eliminate slack in the multilayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member. A compliance mechanism is provided so that the contact terminal group of the tip surface is arrayed in parallel with the electrode group terminal surface, so that the tips of the contact terminals contact the surface of the electrodes with an equal pressure.

    摘要翻译： 为了在连接装置和测试器之间实现电信号的高速交换，提供支撑构件以支撑连接装置，多个尖端接触端子排列在探测侧的区域中，提供多层膜，其具有 电连接到接触端子的多个引出线和包围绝缘层的接地层，并且框架被夹持在多层膜的后侧。 在框架上设置夹紧构件以使多层膜突出以消除多层膜中的松弛。 提供接触压力装置，用于使接触端子的尖端以预定的从支撑构件到夹紧构件的接触压力接触每个电极。 提供了一种符合机构，使得尖端表面的接触端子组与电极组端子表面平行地排列，使得接触端子的尖端以相等的压力接触电极的表面。

    CONNECTION DEVICE AND TEST SYSTEM
    6.
    发明申请
    CONNECTION DEVICE AND TEST SYSTEM 失效
    连接装置和测试系统

    公开(公告)号：US20080009082A1

    公开(公告)日：2008-01-10

    申请号：US11853979

    申请日：2007-09-12

    申请人： Susumu Kasukabe ,  Terutaka Mori ,  Akihiko Ariga ,  Hidetaka Shigi ,  Takayoshi Watanabe ,  Ryuji Kono

    发明人： Susumu Kasukabe ,  Terutaka Mori ,  Akihiko Ariga ,  Hidetaka Shigi ,  Takayoshi Watanabe ,  Ryuji Kono

    IPC分类号： H01L21/66

    CPC分类号： G01R31/2889 ,  G01R1/06744 ,  G01R1/06772 ,  G01R1/0735 ,  G01R3/00 ,  G01R31/2863

    摘要： To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multiplayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multiplayer film. A clamping member is provided on the frame to make the multiplayer film project out to eliminate slack in the multiplayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member. A compliance mechanism is provided so that the contact terminal group of the tip surface is arrayed in parallel with the electrode group terminal surface, so that the tips of the contact terminals contact the surface of the electrodes with an equal pressure.

    摘要翻译： 为了在连接装置和测试器之间实现电信号的高速交换，提供了一种用于支撑连接装置的支撑构件，多个尖端接触端子被排列在探测侧的区域中，提供了一种多层膜，其具有 电连接到接触端子的多个引出线和包围绝缘层的接地层，并且框架被夹持在多人膜的后侧。 夹持构件设置在框架上以使多人影片投射出来以消除多人影片中的松弛。 提供接触压力装置，用于使接触端子的尖端以预定的从支撑构件到夹紧构件的接触压力接触每个电极。 提供了一种符合机构，使得尖端表面的接触端子组与电极组端子表面平行地排列，使得接触端子的尖端以相等的压力接触电极的表面。

    Connection device and test system
    7.
    发明授权
    Connection device and test system 失效

    公开(公告)号：US07541202B2

    公开(公告)日：2009-06-02

    申请号：US11853979

    申请日：2007-09-12

    申请人： Susumu Kasukabe ,  Terutaka Mori ,  Akihiko Ariga ,  Hidetaka Shigi ,  Takayoshi Watanabe ,  Ryuji Kono

    发明人： Susumu Kasukabe ,  Terutaka Mori ,  Akihiko Ariga ,  Hidetaka Shigi ,  Takayoshi Watanabe ,  Ryuji Kono

    IPC分类号： H01L21/66 ,  G01R31/26

    CPC分类号： G01R31/2889 ,  G01R1/06744 ,  G01R1/06772 ,  G01R1/0735 ,  G01R3/00 ,  G01R31/2863

    摘要： To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multiplayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multiplayer film. A clamping member is provided on the frame to make the multiplayer film project out to eliminate slack in the multiplayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member. A compliance mechanism is provided so that the contact terminal group of the tip surface is arrayed in parallel with the electrode group terminal surface, so that the tips of the contact terminals contact the surface of the electrodes with an equal pressure.

    Connection device and test system
    8.
    发明授权
    Connection device and test system 失效
    连接设备和测试系统

    公开(公告)号：US06759258B2

    公开(公告)日：2004-07-06

    申请号：US09971606

    申请日：2001-10-09

    申请人： Susumu Kasukabe ,  Terutaka Mori ,  Akihiko Ariga ,  Hidetaka Shigi ,  Takayoshi Watanabe ,  Ryuji Kono

    发明人： Susumu Kasukabe ,  Terutaka Mori ,  Akihiko Ariga ,  Hidetaka Shigi ,  Takayoshi Watanabe ,  Ryuji Kono

    IPC分类号： G01R3126

    CPC分类号： G01R31/2889 ,  G01R1/06744 ,  G01R1/06772 ,  G01R1/0735 ,  G01R3/00 ,  G01R31/2863

    摘要： To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multiplayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multiplayer film. A clamping member is provided on the frame to make the multiplayer film project out to eliminate slack in the multiplayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member. A compliance mechanism is provided so that the contact terminal group of the tip surface is arrayed in parallel with the electrode group terminal surface, so that the tips of the contact terminals contact the surface of the electrodes with an equal pressure.

    摘要翻译： 为了在连接装置和测试器之间实现电信号的高速交换，提供了一种用于支撑连接装置的支撑构件，多个尖端接触端子被排列在探测侧的区域中，提供了一种多层膜，其具有 电连接到接触端子的多个引出线和包围绝缘层的接地层，并且框架被夹持在多人膜的后侧。 夹持构件设置在框架上以使多人影片投射出来以消除多人影片中的松弛。 提供接触压力装置，用于使接触端子的尖端以预定的从支撑构件到夹紧构件的接触压力接触每个电极。 提供了一种符合机构，使得尖端表面的接触端子组与电极组端子表面平行地排列，使得接触端子的尖端以相等的压力接触电极的表面。

    Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof
    9.
    发明授权
    Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof 有权
    用于外延晶片的硅晶片，外延晶片及其制造方法

    公开(公告)号：US06626994B1

    公开(公告)日：2003-09-30

    申请号：US09890007

    申请日：2001-07-24

    申请人： Akihiro Kimura ,  Hideki Sato ,  Ryuji Kono ,  Masahiro Kato ,  Masaro Tamatsuka

    发明人： Akihiro Kimura ,  Hideki Sato ,  Ryuji Kono ,  Masahiro Kato ,  Masaro Tamatsuka

    IPC分类号： C30B2500

    CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  H01L21/02381 ,  H01L21/02532

    摘要： There are provided a silicon wafer for epitaxial growth wherein a void type defect is not exposed on the surface where an epitaxial layer is grown, and a method for producing an epitaxial wafer comprising measuring the number of the void type defects exposed on the surface of a silicon wafer and/or the number of the void type defects which exist in the part to the depth of at least 10 nm from the surface of the silicon wafer, choosing the silicon wafer wherein the number of these void type defects is smaller than the predetermined value, and growing an epitaxial layer on the surface of the chosen silicon wafer. Thereby, there can be provided a silicon wafer for epitaxial growth wherein generation of SF is reduced and epitaxial wafer, and a method for producing it.

    摘要翻译： 提供了一种用于外延生长的硅晶片，其中空隙型缺陷不暴露在外延层生长的表面上，以及一种用于制造外延晶片的方法，包括测量暴露在外表面上的空穴型缺陷的数量 硅晶片和/或从硅晶片表面到深度至少为10nm的部分中存在的空隙型缺陷的数量，选择硅晶片，其中这些空隙型缺陷的数量小于预定的 值，并且在所选硅晶片的表面上生长外延层。 因此，可以提供一种用于外延生长的硅晶片，其中SF的产生被减少，并且外延晶片及其制造方法。