Oxide thin film for bolometer and infrared detector using the oxide thin film

Invention Grant

US06489613B1 Oxide thin film for bolometer and infrared detector using the oxide thin film 有权

Title translation: 氧化薄膜用于测辐射热计和红外探测器使用氧化物薄膜

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Patent Title: Oxide thin film for bolometer and infrared detector using the oxide thin film
Patent Title (中): 氧化薄膜用于测辐射热计和红外探测器使用氧化物薄膜
Application No.: US09387878

Application Date: 1999-09-01
Publication No.: US06489613B1

Publication Date: 2002-12-03
Inventor: Toru Mori , Katsuya Kawano
Applicant: Toru Mori , Katsuya Kawano
Priority: JP10-247419 19980901; JP11-194502 19990708
Main IPC: H01L3109
IPC: H01L3109

Oxide thin film for bolometer and infrared detector using the oxide thin film

Abstract:

An oxide thin film for bolometer having a vanadium oxide represented by VOx, where x satisfies 1.5≦x≦2.0, part of vanadium ion in the vanadium oxide being substituted by metal ion M, where the metal ion M is at least one of chromium (Cr), aluminum (Al), iron (Fe), manganese (Mn), niobium (Nb), tantalum (Ta) and titanium (Ti). Also, provided is an infrared detector having a bolometer thin film defined above. The oxide thin film for bolometer offers a low resistivity and a large TCR value. Also, the infrared detector offers a finer temperature resolution capability (NETD) as low as 0.03° C.

Abstract(Chinese):

一种用于具有由VOx表示的氧化钒的测辐射热计的氧化物薄膜，其中x满足1.5 <= x <= 2.0，氧化钒中的钒离子的一部分被金属离子M取代，其中金属离子M是铬（Cr），铝（Al），铁（Fe），锰（Mn），铌（Nb），钽（Ta）和钛（Ti）。而且，提供了一种具有上述定影仪薄膜的红外检测器。测辐射热计的氧化物薄膜具有低电阻率和较大的TCR值。此外，红外检测器可提供低至0.03°C的更精细的温度分辨能力（NETD）。

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