公开(公告)号：US06495830B1

公开(公告)日：2002-12-17

申请号：US09666828

申请日：2000-09-21

申请人： Robert J. Martin

发明人： Robert J. Martin

IPC分类号： H01L3109

CPC分类号： H01L27/14649

摘要： A quantum well infrared focal plane array achieves hyper-spectral measurements of incident infrared radiation using a voltage dividing network that applies different and adjustable biasing voltages to each line of the line by column array. The peak wavelengths of each quantum well layer of each detector structure in the array is set to a specified nominal value by appropriate fabrication of the depths of the quantum wells of the layers. The nominal peak wavelength value of each quantum well layer can further be varied by modulating the bias voltage applied to the gate of the direct injection transistor associated with each detector structure of the array. A read out integrated circuit (ROIC) containing the direct injection transistor processes the photo-current from each quantum well layer of each detector structure. Using an n by n array of vertically stacked detector structures, along with the associated ROIC, a focal plane array can be fabricated where each row of detector elements in the array is responsive to different peak wavelengths.

摘要翻译： 量子阱红外焦平面阵列使用分压网络实现入射红外辐射的超光谱测量，该分压网络通过列阵列对线的每条线施加不同的和可调的偏置电压。 阵列中每个检测器结构的每个量子阱层的峰值波长通过适当地制造层的量子阱的深度而被设置为指定的标称值。 通过调制施加到与阵列的每个检测器结构相关联的直接注入晶体管的栅极的偏置电压，可以进一步改变每个量子阱层的标称峰值波长值。 包含直接注入晶体管的读出集成电路（ROIC）处理来自每个检测器结构的每个量子阱层的光电流。 使用垂直堆叠的检测器结构的n×n阵列以及相关联的ROIC，可以制造焦平面阵列，其中阵列中的每一列检测器元件响应于不同的峰值波长。

公开(公告)号：US06740807B2

公开(公告)日：2004-05-25

申请号：US09963419

申请日：2001-09-27

申请人： Michio Ono

发明人： Michio Ono

IPC分类号： H01L3109

CPC分类号： H01G9/2031 ,  H01G9/2009 ,  H01G9/2013 ,  H01G9/2018 ,  H01G9/2059 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L51/0064 ,  H01L51/0078 ,  H01L51/0086 ,  Y02E10/542

摘要： A differential response light-receiving device comprising: a semiconductor electrode comprising an electrically conductive layer and a photosensitive layer containing a semiconductor sensitized by a dye; an ion-conductive electrolyte layer; and a counter electrode, the differential response light-receiving device making time-differential response to quantity of light to output a photoelectric current. A composite light-receiving device comprising the differential response light-receiving device and a stationary response light-receiving device, and an image sensor using the differential response light-receiving device or the composite light-receiving device are also provided.

摘要翻译： 一种差分响应光接收装置，包括：半导体电极，包括导电层和含有由染料敏化的半导体的感光层; 离子传导电解质层; 和对电极，差分响应光接收装置对光量产生时间微分响应以输出光电流。 还提供了包括差分响应光接收装置和静止响应光接收装置的复合光接收装置，以及使用差分响应光接收装置或复合光接收装置的图像传感器。

公开(公告)号：US06198098B1

公开(公告)日：2001-03-06

申请号：US09085267

申请日：1998-05-26

申请人： Philips Laou

发明人： Philips Laou

IPC分类号： H01L3109

CPC分类号： G01J5/20

摘要： Microstructure for bolometer for high infrared sensitivity and detectivity having a corrugated air bridge microstructure which provides a large area, low infrared reflection and large infrared absorption so as to increase the sensitivity and detectivity.

摘要翻译： 用于高红外灵敏度和检测率的测辐射热计的微结构具有波纹空气桥微结构，其提供大面积，低红外反射和大的红外吸收，以增加灵敏度和检测性。

公开(公告)号：US06657194B2

公开(公告)日：2003-12-02

申请号：US09834446

申请日：2001-04-13

申请人： Renganathan Ashokan ,  Paul Boieriu ,  Yuanping Chen ,  Jean-Pierre Faurie ,  Sivalingam Sivananthan

发明人： Renganathan Ashokan ,  Paul Boieriu ,  Yuanping Chen ,  Jean-Pierre Faurie ,  Sivalingam Sivananthan

IPC分类号： H01L3109

CPC分类号： H01L27/1465 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/14652 ,  H01L27/14687 ,  H01L27/1469

摘要： At a face of a silicon semiconductor substrate tilted about one degree from a [100] orientation, a readout integrated circuit (ROIC) is implemented, specially designed and fabricated for direct epitaxial growth. Layers of II-VI semiconductor material, preferably including layers of HgCdTe of different bandgaps, are successively and monolithically grown on the face by molecular beam epitaxy (MBE) within a window masking the face and then patterned and wet-etched to create mesas of two-color detector elements in an array. Preferably a beginning buffer layer of CdTe is grown to minimize crystalline mismatch between the Si and the HgCdTe. Sloped sidewalls of the mesas ensure good step coverage of the conductive interconnects from the detector elements to the ROIC.

摘要翻译： 在从[100]取向倾斜大约一度的硅半导体衬底的表面上，实现了专门设计和制造用于直接外延生长的读出集成电路（ROIC）。 优选地包括不同带隙的HgCdTe的层的II-VI半导体材料的层通过分子束外延（MBE）在掩模该面的窗口中在面上连续地并且整体地生长，然后被图案化和湿蚀刻以形成两面的台面 彩色检测器元件在阵列中。 优选地，生长CdTe的起始缓冲层以最小化Si和HgCdTe之间的晶体失配。 台面的斜边确保了从检测器元件到ROIC的导电互连的良好阶梯覆盖。

公开(公告)号：US06452187B1

公开(公告)日：2002-09-17

申请号：US09645377

申请日：2000-08-24

申请人： Lewis Taylor Claiborne ,  Pradip Mitra

发明人： Lewis Taylor Claiborne ,  Pradip Mitra

IPC分类号： H01L3109

CPC分类号： H01L31/109

摘要： A two-color photodetector for detecting two different bands of infrared radiation is described. The photodetector includes either a diffractive resonant optical cavity that resonates at the two colors of interest, or a diffractive resonant optical cavity that resonates at the first color and a vertical resonant optical cavity that resonates at the second color. By placing materials that absorb only one of the two colors at the appropriate locations within the resonate structure, the resultant signals include little cross-talk due to the opposite color. The two-color photodetector finds use in applications covering a wide portion of the infrared spectrum.

摘要翻译： 描述了用于检测两个不同的红外辐射带的双色光电探测器。 光电检测器包括以感兴趣的两种颜色谐振的衍射谐振光学腔或者以第一颜色谐振的衍射谐振光学腔和以第二种颜色谐振的垂直共振光腔。 通过将仅吸收两种颜色之一的材料放置在谐振结构内的适当位置处，所得到的信号由于相反的颜色而包括很少的串扰。 双色光电探测器用于覆盖广泛部分红外光谱的应用中。

公开(公告)号：US06194722B1

公开(公告)日：2001-02-27

申请号：US09049797

申请日：1998-03-27

申请人： Paolo Fiorini ,  Sherif Sedky ,  Matty Caymax ,  Christiaan Baert

发明人： Paolo Fiorini ,  Sherif Sedky ,  Matty Caymax ,  Christiaan Baert

IPC分类号： H01L3109

CPC分类号： B81C1/00666 ,  B81C2201/017 ,  G01J5/20 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

公开(公告)号：USRE38527E1

公开(公告)日：2004-06-08

申请号：US09972967

申请日：2001-10-10

申请人： Akio Tanaka

发明人： Akio Tanaka

IPC分类号： H01L3109

CPC分类号： H04N5/33 ,  H04N5/3651

摘要： A thermal-type infrared imaging device includes a first thermo-electric converting element (101) for generating an electric signal which corresponds to temperature determined according to heat generated by absorbing an incident infrared ray, a first bipolar transistor (102) having its emitted connected to the first thermo-electric converting element (101), and a second bipolar transistor (104) having its collector connected to the collector of the first bipolar transistor (102). The thermal-type infrared imaging device further includes a resistor (103) connected at one end thereof to a power supply and at the other end to the emitter of the second bipolar transistor (104), and an integration capacitor (105) connected to a connecting point of the respective collectors of the first and second bipolar transistor (102 and 104).

公开(公告)号：US06249002B1

公开(公告)日：2001-06-19

申请号：US09011942

申请日：1998-08-24

申请人： Neal R. Butler

发明人： Neal R. Butler

IPC分类号： H01L3109

CPC分类号： H04N5/33 ,  G01J5/22 ,  H04N5/3651 ,  H04N5/3655

摘要： An array of infrared sensitive bolometric detectors. The bolometers are connected across row and column readout lines. Integrated on the array are column signal processors that measure the resistance of each bolometer. Each column signal processor stores the output of a bolometer on an integrator. The array is temperature stabilized to a predetermined temperature to keep bolometer response within a predetermined bandwith.

摘要翻译： 一系列红外敏感型辐射探测器。 测辐射热量计连接在行和列读数线之间。 集成在阵列中的是列信号处理器，用于测量每个测辐射热计的电阻。 每个列信号处理器将积分仪上的测辐射热谱仪的输出存储。 该阵列温度稳定在预定温度，以保持测辐射热计响应在预定的带宽内。

公开(公告)号：US06229144B1

公开(公告)日：2001-05-08

申请号：US09212404

申请日：1998-12-16

申请人： Jean-Louis Ouvrier-Buffet ,  Jean-Jacques Yon

发明人： Jean-Louis Ouvrier-Buffet ,  Jean-Jacques Yon

IPC分类号： H01L3109

CPC分类号： H01L31/09 ,  G01J5/20

摘要： A bolometric heat detector having an active part composed of at least two coplanar electrodes (8, 10) placed in electrical contact with a first thin semiconducting layer (6), doped by a first doping agent with a first type of conductivity. There is a second thin semiconducting layer (4) doped like the first layer or undoped, and a third thin semiconducting layer (2) doped by a second doping agent with a second type of conductivity opposed to the first. The second layer (4) is placed between the first (6) and the third (2) layers.

摘要翻译： 一种热辐射热检测器，其具有由至少两个共面电极（8,10）构成的有源部分，所述至少两个共面电极（8,10）与第一薄膜半导体层（6）电接触，由第一掺杂剂掺杂，具有第一类型的导电性。 存在掺杂类似于第一层或未掺杂的第二薄半导体层（4）和由第二掺杂剂掺杂的第三薄半导电层（2），其具有与第一掺杂相对的第二类型的导电性。 第二层（4）被放置在第一层（6）和第三层（2）之间。

公开(公告)号：US06201244B1

公开(公告)日：2001-03-13

申请号：US09146256

申请日：1998-09-03

申请人： Sang-Baek Ju ,  Yoon-Joong Yong

发明人： Sang-Baek Ju ,  Yoon-Joong Yong

IPC分类号： H01L3109

CPC分类号： G01J5/20

摘要： A three-level infra-red bolometer includes an active matrix level, a support level, a pair of posts and an absorption level. The active matrix level includes a substrate having an integrated circuit, a pair of connecting terminals and a protective layer covering the substrate. The support level includes a pair of bridges, each of the bridges being provided with a conduction line formed on top thereof, wherein one end of the conduction line is electrically connected to the respective connecting terminal. The absorption level includes a serpentine bolometer element surrounded by an absorber made of silicon oxide (SiO2) or silicon oxy-nitride (SiOxNy). Each of the posts includes an electrical conduit surrounded by an insulating material and is placed between the absorption level and the bridge, in such a way that the serpentine bolometer element is electrically connected to the integrated circuit through the electrical conduit, the conduction line and the connecting terminal.

摘要翻译： 三级红外辐射热分析仪包括有源矩阵水平，支持水平，一对柱和吸收水平。 有源矩阵电平包括具有集成电路的基板，一对连接端子和覆盖该基板的保护层。 支撑级包括一对桥，每个桥设置有形成在其顶部的导线，其中导线的一端电连接到相应的连接端子。 吸收水平包括由氧化硅（SiO 2）或氮氧化硅（SiO x N y）制成的吸收体包围的蛇形测辐射热计元件。 每个柱包括由绝缘材料包围并且被放置在吸收水平和桥之间的电导管，使得蛇形测辐射热计元件通过电导线，导线和 连接端子。