发明授权
- 专利标题： Semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件
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申请号： US09983717申请日： 2001-10-25
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公开(公告)号： US06501689B2公开(公告)日： 2002-12-31
- 发明人: Kenichi Kuroda , Toshifumi Takeda , Hisahiro Moriuchi , Masaki Shirai , Jiroh Sakaguchi , Akinori Matsuo , Shoji Yoshida
- 申请人： Kenichi Kuroda , Toshifumi Takeda , Hisahiro Moriuchi , Masaki Shirai , Jiroh Sakaguchi , Akinori Matsuo , Shoji Yoshida
- 优先权： JP2-184838 19900712; JP2-303118 19901108
- 主分类号： G11C700
- IPC分类号： G11C700
摘要：
A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.
公开/授权文献
- US20020048204A1 Semiconductor integrated circuit device 公开/授权日：2002-04-25
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