发明授权
- 专利标题： Gallium nitride-based III-V group compound semiconductor
- 专利标题（中）： 基于氮化镓的III-V族化合物半导体
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申请号： US09750912申请日： 2001-01-02
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公开(公告)号： US06507041B2公开(公告)日： 2003-01-14
- 发明人: Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
- 申请人： Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
- 优先权： JP5-124890 19930428; JP5-129313 19930531; JP5-207274 19930728; JP5-234684 19930921; JP5-234685 19930921; JP5-253171 19931008; JP6-8726 19940128; JP6-8727 19940128
- 主分类号： H01L2972
- IPC分类号： H01L2972
摘要：
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
公开/授权文献
- US20010022367A1 Gallium nitride-based III-V group compound semiconductor 公开/授权日：2001-09-20